2000
DOI: 10.1103/physrevlett.85.4116
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Roughness Evolution of Ion Sputtered Rotating InP Surfaces: Pattern Formation and Scaling Laws

Abstract: The topography evolution of simultaneously rotated and Ar (+) ion sputtered InP surfaces was studied using scanning force microscopy. For certain sputter conditions, the formation of a highly regular hexagonal pattern of close-packed mounds was observed with a characteristic spatial wavelength which increases with sputter time t according to lambda approximately t(gamma) with gamma approximately 0.26. Based on the analysis of the dynamic scaling behavior of the surface roughness, the evolution of the surface t… Show more

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Cited by 324 publications
(218 citation statements)
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“…Similar results have been subsequently reported by Gago et al 8 for Si targets under normal incidence and, more generally, by Frost et al 9,10,11 for rotated InP, InSb and GaSb targets under oblique incidence (where as function of the inclination angle a variety of other patterns have also been observed). To theoretically explain the hexagonal ordering and taking advantage of earlier work by Elder et al 12,13 (cf.…”
Section: Introductionsupporting
confidence: 77%
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“…Similar results have been subsequently reported by Gago et al 8 for Si targets under normal incidence and, more generally, by Frost et al 9,10,11 for rotated InP, InSb and GaSb targets under oblique incidence (where as function of the inclination angle a variety of other patterns have also been observed). To theoretically explain the hexagonal ordering and taking advantage of earlier work by Elder et al 12,13 (cf.…”
Section: Introductionsupporting
confidence: 77%
“…This argument can be generalized: Separating the functional G[∇h] in Eq. (9) in terms that can be rewritten as the divergence of a flux, G F [∇h] = ∇ · j F , and terms G NF [∇h] that cannot, the corresponding transformation is determined by h(x, t) =ĥ(x, t)…”
Section: Transformation To a Local Equationmentioning
confidence: 99%
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“…This erodes a surface at different rates depending on the slope of the surface, so intricate two-dimensional structures can emerge. Currently, focused ion beam bombardment is used to micromachine tall, steep features 5,6 , and to sculpt nanopore single-biomolecule detectors 7,8 , while uniform ion bombardment of a flat surface is used to create semiconductor quantum dots from the linear instabilities that are excited [9][10][11] . The utility of these techniques is, however, limited.…”
Section: Introductionmentioning
confidence: 99%
“…Low-energy ion beam sputtering (IBS) is a powerful bottom-up technology for generating diverse self-organized nanostructures, such as ripples and dots on different materials including amorphous SiO 2 [1][2][3][4][5][6][7], single crystalline Si [8][9][10][11][12], Ge [10,13] and Ag [14], as well as compound semiconductors GaSb [15] and InP [16]; the IBS technology offers the potential to achieve high throughput and fabrication of large areas [10,[17][18][19]. Ion beam parameters (species, incidence angle, energy, flux, etc) and substrate parameters (material, temperature, initial surface topography, etc) interact to generate the features of such nanopatterns.…”
Section: Introductionmentioning
confidence: 99%