RTN and LFN Noise Performance in Advanced FDSOI Technology

Pirro, L.; Zimmerhackl, O.; Zaka, A.; Miiller-Meskamp, L.; Nelluri, R.; Hermann, T.; Cortes-Mayol, I.; Huschka, Andreas; Otto, Michael; Nowak, E.; Mittal, Anurag; Hoentschel, J.

doi:10.1109/essderc.2018.8486917

Cited by 7 publications

(4 citation statements)

References 6 publications

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“…It should also be noted, by comparing Figure 11 and Figure 13(a), that the normalized drain current noise has a similar behaviour with V G2 as that of the noise coupling factor c 1 . This type of noise dependence on the back-bias voltage was also confirmed in [61] for the 22 nm FD-SOI node (Figure 13 If only the CNF model of Eq. 22is taken into account without CMF, this behavior cannot be explained, because neither (g m1 /I D ) 2 nor (g m2 /I D ) 2 is increasing for negative V G2 .…”

Section: A Front/back Coupling Effectssupporting

confidence: 70%

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Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Theodorou

Ghibaudo

2020

Noise in Nanoscale Semiconductor Devices

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Section: A Front/back Coupling Effectssupporting

confidence: 70%

“…a) Comparison of experimental normalized drain current PSD versus V G2 results with the CNF and CNF/CMF model results, for samples from STMicroelectronics (after[17]), b) Percentage change of S Vg median over 30 dies versus back-bias (after[61]). …”

mentioning

confidence: 99%

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Theodorou

Ghibaudo

2020

Noise in Nanoscale Semiconductor Devices

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“…Imamoto et al [19], Forbes and Miller [20], Chen et al [21], Ioannidis et al [22], Pirro et al [23] have tried to decrease the level of RTN noise by changing some parameters in the structure of MOSFET devices. Although these methods can be effective, they might be so expensive.…”

Section: Introduction1mentioning

confidence: 99%

Employing the Empirical Mode Decomposition to Denoise the Random Telegraph Noise

Moshrefi

Aghababa

Shoaei

2021

IJE

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Random Telegraph Noise (RTN) is a stochastic phenomenon which leads to characteristic variations in electronic devices. Finding features of this signal may result in its modeling and eventually removing the noise in the device. Measuring this signal is accompanied by some noise and therefore we require a method to improve the Signal to Noise Ratio (SNR). As a result, the extraction of an accurate RTN is a remarkable challenge. Empirical Mode Decomposition (EMD) as a fully adaptive and signal dependent method, with no dependency to the specific function, can be an appropriate solution. In this paper, we evaluate the most recent methods and compare them with our proposed approach for the artificial and actual RTN signals. The results show the higher accuracy and efficiency by about 54%, 61% and 39% improvement in SNR, Mean Square Error (MSE) and Percent Root mean square Difference (PRD) respectively for the optimized wited method. Finally, an indicator to evaluate the reliability in digital circuits is introduced.

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“…andom Telegraph Noise (RTN) has become one standard test for future ultra-scaled transistors [1][2][3]. However, the standard RTN procedure [4] only captures the current under constant gate voltage, VG_RTN, which contains limited information.…”

Section: Introductionmentioning

confidence: 99%

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Zhan

Shen

et al. 2019

IEEE Electron Device Lett.

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A simple Dual-Point technique to measure the entire transfer characteristics (ID-VG) down to sub-threshold region in the nano-scaled MOSFET under Random Telegraph Noise (RTN) condition with either capturing or emitting one elementary charge by a trap in the gate dielectric is proposed. Its compatibility with the commercial semiconductor analyzer makes it a readily-usable tool for future RTN study. In this work, we use this technique to explore the VG dependence of RTN induced by a single trapped carrier in both n-and p-FETs.

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RTN and LFN Noise Performance in Advanced FDSOI Technology

Cited by 7 publications

References 6 publications

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Employing the Empirical Mode Decomposition to Denoise the Random Telegraph Noise

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

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RTN and LFN Noise Performance in Advanced FDSOI Technology

Cited by 7 publications

References 6 publications

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Noise and Fluctuations in Fully Depleted Silicon-on-Insulator MOSFETs

Employing the Empirical Mode Decomposition to Denoise the Random Telegraph Noise

A Dual-Point Technique for the Entire ID–VG Characterization Into Subthreshold Region Under Random Telegraph Noise Condition

Contact Info

Product

Resources

About

A Dual-Point Technique for the Entire I_D–V_G Characterization Into Subthreshold Region Under Random Telegraph Noise Condition