RTP shallow junction formation of low energy boron implants into preamorphized silicon

Basra, Vijay K.; Downey, Daniel F.

doi:10.1016/0168-583x(87)90891-3

Cited by 7 publications

(1 citation statement)

References 6 publications

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“…Ion implantation is one of the widely used methods for production of microelectronic devices. Dual ion implantation is used to create p + n shallow junctions in diodes [1][2][3]. It is well known that the ion implantation is accompanied by the formation of radiation defects and the appearance of elastic deformation of the crystalline lattice which have an adverse effect on the electrical properties of silicon.…”

Section: Introductionmentioning

confidence: 99%

Annealing of radiation defects in dual-implanted silicon

Kozlov

Оджаев

Popok

et al. 1996

Semicond. Sci. Technol.

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Silicon samples dual implanted with B + + N + and B + + Ar + ions and then furnace annealed at temperatures up to 900 • C were studied using RBS and EPR. An anomalous decrease of defect concentration after subsequent implantation with boron and nitrogen ions to the same dose (1.2 × 10 15 cm −2 ) was observed due to radiation annealing. A transformation of simple point defects to pentavacancies during annealing was found, which depends on the degree of silicon amorphization. The defect annealing temperature was found to be a function of the dose and ion species combination in the first and second implantations.

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Section: Introductionmentioning

confidence: 99%

Annealing of radiation defects in dual-implanted silicon

Kozlov

Оджаев

Popok

et al. 1996

Semicond. Sci. Technol.

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Dual implantation of silicon with boron and argon ions

Popok

Hnatowicz

Kvítek

et al. 1994

Phys. Stat. Sol. (a)

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Depth Distribution of Boron and Radiation Defects in Silicon Dual Implanted with B+ and N+ Ions

Оджаев

Popok

Červená

et al. 1995

Phys. Stat. Sol. (a)

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Silicon wafers (〈100〉, n‐type) are implanted by 40 keV B+ ions to the doses of 1.2 × 1014 or 1.2 × 1015 cm−2 and then by 50 or 100 keV N+ ions to the doses in the range of 1.2 × 1014 to 1.2 × 1015 cm−2. The depth profiles of the implanted boron atoms are obtained using the 10B(n, α)7 Li nuclear reaction. The distributions of radiation defects are studied by the RBS‐channeling technique. The boron depth profiles show strong inward asymmetry which may be due to resisdual channeling. Additional nitrogen implantation almost does not affect the distribution of implanted boron ions. The effects of the implantation dose and energy of both B+ and N+ ions on the resulting damage formation in the dual implanted silicon are studied. Radiation (self) annealing is observed in the case of high dose dual implantation with boron and nitrogen ions.

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RTP shallow junction formation of low energy boron implants into preamorphized silicon

Cited by 7 publications

References 6 publications

Annealing of radiation defects in dual-implanted silicon

Annealing of radiation defects in dual-implanted silicon

Dual implantation of silicon with boron and argon ions

Depth Distribution of Boron and Radiation Defects in Silicon Dual Implanted with B+ and N+ Ions

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