RTS capture kinetics and Coulomb blockade energy in submicron nMOSFETs under surface quantization conditions

High-quality silicon nanowire (NW) field-effect transistors (FETs) were designed and fabricated. Features of transport and modulation phenomena of the structures were studied using a number of techniques, including noise spectroscopy. Using the 1/f noise component level, the values of the volume trap densities in gate dielectric are estimated to be around 1 Â 10 17 cm À3 eV À1 . This result proves high quality of the investigated structures. Analysis of Lorentzian noise components of NW samples is used to characterize single trap and its parameters. A strong modulation of carrier concentration in the conducting channel under influence of even single carrier capture event has been revealed. Possibility of fine tuning of the transport properties of the sample with low-dose gamma irradiation has been shown. The gamma radiation treatment of the NW samples was applied as an effective technique to confirm the strong influence of trap charges on conductivity behavior in the channel of NW FETs. The results demonstrate that the modulation effects at the nanoscale enable effective changing of the channel conductivity by single capture events and thus are promising for future information technologies and ultra-sensitive single-molecular sensor applications. V C 2013 American Institute of Physics. [http://dx.

Section: B 1/f Noise Spectroscopymentioning

confidence: 99%

Section: F Single Trap Properties and Parametersmentioning

confidence: 99%

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Modulation phenomena in Si nanowire field-effect transistors characterized using noise spectroscopy and gamma radiation technique

Pud

Petrychuk

et al. 2013

“…An analysis of the measured data using the method described in Refs. 51,[60][61][62] shows that trap has a repulsive character due to the very small capture cross-section of 10 À20 cm 2 , and that its activation energy is equal to 0:47 eV. It should be noted that the capture cross-section in the case of the dielectric is typically several orders of magnitude smaller than for the bulk Si material trapping.…”

Section: Random Telegraph Signal Behavior Of Drain Currentmentioning

confidence: 95%

Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

Pud

Gasparyan

Petrychuk

et al. 2014

Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

“…[9][10][11][12] Now, it is commonly considered that the decisive factors determining the strong current dependence of s c are electron distribution (perpendicular to the Si/SiO 2 interface) dependent on the high electric field near the interface 9 and Coulomb blockade effect. [10][11][12] On the other hand, it is shown by Mueller et al…”

Section: Introductionmentioning

confidence: 99%

Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

Gasparyan

Zadorozhnyi

2015

Articles you may be interested inThe basic reason for enhanced electron capture time, s c , of the oxide single trap dependence on drain current in the linear operation regime of p þ -p-p þ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of s c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n þ -p-n þ FETs, the experimentally observed slope of s c equals (À1). On the contrary, for the case of p þ -p-p þ Si FETs in the accumulation regime, the experimentally observed slope of s c equals (À2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface. V C 2015 AIP Publishing LLC.