$S$- and $C$-Band Ultra-Compact Phase Shifters Based on All-Pass Networks

Hangai, Masatake; Hieda, Morishige; Yunoue, Norihiro; Sasaki, Y.; Miyazaki, Moriyasu

doi:10.1109/tmtt.2009.2036322

Cited by 59 publications

(15 citation statements)

References 7 publications

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“…For the pre-emphasis of the dim way signal, the typical allpass network passive phase shift circuit is used, as shown in Figure 6 (a). For the need to shift the phase angle is less than 45 degrees, this all-pass passive phase shifter can shift the phase with a small-time error within the relative bandwidth of 10% to 20% [27], [28]. At the same time, it can achieve relatively good impedance matching.…”

Section: Pre-emphasis Circuit For Class C Push-pull Structure Drmentioning

confidence: 99%

A High-Efficiency High Power Driver Circuit for Joint Illumination and Communication System With Phase Shift Pre-Emphasis Technology

et al. 2021

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Section: Pre-emphasis Circuit For Class C Push-pull Structure Drmentioning

confidence: 99%

A High-Efficiency High Power Driver Circuit for Joint Illumination and Communication System With Phase Shift Pre-Emphasis Technology

et al. 2021

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“…Common circuit topologies for phase shifters include loaded-line [5], reflection-type [6], and filter-type [7], [8]. Among them, filter-type phase shifters are often implemented using lumped elements and therefore have a compact circuit size.…”

Section: Ferroelectric-based All-pass Phase Shiftermentioning

confidence: 99%

Ferroelectric thin-film integrated capacitor and its application in radio-frequency phase shifter design

Chen

2013

2013 IEEE Electrical Design of Advanced Packaging Systems Symposium (EDAPS)

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Tuning element is essential for the design of tunable and reconfigurable RF circuits. Ferroelectric thin-film integrated capacitor is proposed in this work as the tuning element for MCM-D SiP technology. The proposed ferroelectric capacitors are fabricated on a sapphire substrate. The fabrication process is described. Measurement results show that the capacitance density is about 19 fF/ m 2 at 0-V bias. The tunability of the ferroelectric capacitor reaches 2:1 as the bias voltage is increased from 0 V to 7 V. The quality factor at 2.4 GHz is 15.5 under 0-V bias and reaches 30 when the bias voltage is 8 V. The proposed ferroelectric capacitor is applied to a RF phase shifter design for the purpose of demonstrating the potential of using the proposed thin-film ferroelectric technology for realizing MCM-D SiP. All-pass network is adopted as the circuit topology for the phase shifter. The design of the phase shifter is explained. To implement the phase shifter, surface mount components are mounted on the substrate on which the ferroelectric capacitors are fabricated. Measurement results show that, for bias voltage ranging from 0 V to 10 V, the phase shifter exhibits an insertion loss less than 2.6 dB and a return loss greater than 9.5 dB from dc to 6 GHz. Maximum phase shift of 98.8° is achieved at 3.15 GHz.

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“…The push for an integrated APN STPS design was recently done in [18], [19], [22], initially at S and C-bands using GaAs [22] and then using 0.18 µm CMOS technology [18], [19] covering a bandwidth from 1.62-3.89 GHz. However, due to lossy switches and low-Q inductors in CMOS, an insertion loss (IL) greater than 12 dB for the latter was achieved.…”

Section: Introductionmentioning

confidence: 99%

A 14–50-GHz Phase Shifter With All-Pass Networks for 5G Mobile Applications

Anjos

Schreurs

Vandenbosch

et al. 2020

IEEE Trans. Microwave Theory Techn.

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In this work, an ultra-broadband phase-shifter (PS) with a 14-50 GHz bandwidth (defined by a phase-error below 1/2 LSB) is presented to address the multi-band requirements of 5G milimeter-wave (mm-wave) systems. The PS construction is based on all-pass networks (APNs), which have shown broad bandwidth capabilities in a lower frequency range. Aiming towards 5G mobile applications, the proposed 2-bit, 45 • phase resolution PS was implemented in 0.25 µm BiCMOS, manufactured and measured, achieving an insertion loss (IL) of 7.4 ± 0.26 dB at 28 GHz and 10 ± 0.22 dB at 39 GHz, with an RMS gain and phase error < 0.27 dB and < 4 • from 24-30 GHz, respectively, and < 0.33 dB and < 6 • from 37-43.5 GHz, demonstrating its capabilities to cover the 5G mm-wave spectrum. Index Terms-All-pass networks (APN), beamforming, broadband, milimeter-wave (mm-wave), multi-band, phase-array transceivers, switched-type phase-shifter (STPS), 5G.

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$S$- and $C$-Band Ultra-Compact Phase Shifters Based on All-Pass Networks

Cited by 59 publications

References 7 publications

A High-Efficiency High Power Driver Circuit for Joint Illumination and Communication System With Phase Shift Pre-Emphasis Technology

A High-Efficiency High Power Driver Circuit for Joint Illumination and Communication System With Phase Shift Pre-Emphasis Technology

Ferroelectric thin-film integrated capacitor and its application in radio-frequency phase shifter design

A 14–50-GHz Phase Shifter With All-Pass Networks for 5G Mobile Applications

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