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In this paper, an L-band partially internally matched GaN amplifier is presented, which is designed so that Class-F condition is met for the 2nd harmonic and Class-E condition is met for the 3rd harmonic. Utilizing these harmonic conditions, high output power together with high efficiency was obtained overcoming power limitation of Class-E. As a result, 360W output power and 65% PAE was successfully obtained at L-band with in-house GaN HEMT.

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