S/N ratio improvement of a nanocuboid array photodetector based on a Au/n-Si Schottky junction for broadband near-infrared light

Shiraishi, Masahiko; Enoki, Takahiro; Kobayashi, Kazuki; Yasunaga, Shun; Ajiki, Yoshiharu; Kan, Tetsuo

doi:10.35848/1347-4065/ac0404

Cited by 4 publications

(1 citation statement)

References 31 publications

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“…Our future work will also analyze the device performance from optical and electrical viewpoints. Moreover, our group has also proposed to improve the S/N by reducing the area of the element, 31) which may be combined to further improve the S/ N. In addition, since this method does not require a mechanical shutter, it can be miniaturized in the microelectronics field.…”

Section: Discussionmentioning

confidence: 99%

Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection

Ajiki

Kan

2023

Jpn. J. Appl. Phys.

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We proposed an electrical shutter operation of a nano-antenna typed infrared photodetector using Schottky Barrier Height (SBH) modulation. We showed that SBH could be modulated by the reverse bias voltage Vb, which is applied to the detector. The inhomogeneity of Shottky junctions might be dominant for the barrier height lowering mechanism. Compared with photocurrents iph that is obtained by modulating a frequency of the incident light, almost the same value of iph is obtained by our proposed method. Thus, we can conclude that our proposed method can carry out synchronous detection measurement. Furthermore, this method does not require any mechanical shutter so the system can be compact enough for micro electrical systems.

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Section: Discussionmentioning

confidence: 99%

Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection

Ajiki

Kan

2023

Jpn. J. Appl. Phys.

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Black silicon for near-infrared and ultraviolet photodetection: A review

et al. 2023

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As a typical representative of micro/nano-textured silicon, black silicon has excellent light absorption properties and is gradually surfacing as a substitute for standard silicon in photoelectric devices. Black silicon overcomes the limitations of traditional silicon-based devices, which are unable to achieve infrared light detection at wavelengths >1100 nm and have low quantum efficiency and sensitivity in ultraviolet light detection. In this article, the recent theoretical and experimental breakthroughs in near-infrared and ultraviolet detection using black silicon are summarized in detail. First, black silicon and the techniques for its fabrication are introduced. Then, the application of enhanced black silicon photodetectors within or above the bandgap limit and black silicon fabricated using different methods in infrared detection is discussed. In principle, infrared detection using black silicon is achieved by jointly utilizing element doping, localized surface plasmon resonance effect, and heterojunction formation. In addition, the application of black silicon in ultraviolet detection is also introduced. Ultraviolet detection is realized by an induced junction and the self-built electric field between black silicon and aluminum oxide. Finally, the increasingly growing potential of black silicon in near-infrared and ultraviolet detection applications, such as infrared night vision imaging, signal detection, ultraviolet light intensity monitoring, and national defense early warning, is further discussed.

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Room-temperature plasmonic mid-infrared photodetector based on PtSi/p-Si low Schottky-barrier junction

Shiraishi

Noda²,

Ohta³

et al. 2022

Appl. Opt.

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In this study, a low Schottky-barrier photodetector with a plasmonic assist using a two-dimensional (2D) nanohole array was demonstrated, which receives mid-infrared (MIR) light at room temperature. In the structural design, it was confirmed that the 2D nanohole-array photodetector has high absorbance in the MIR region using rigorous coupled-wave analysis. The result showed that the nanoholes formed in p-type silicon (p-Si), platinum silicide (PtSi), to form Schottky barriers, and gold (Au), for photocurrent extraction, had high absorbance in the MIR region along with the Fabry–Perot resonance mode toward the depth of the nanohole. The 2D nanohole array, with Au/PtSi/p-Si layers, has high absorbance for illuminating MIR light near 3.46 µm from the backside. The current–voltage characteristics indicated a low Schottky barrier of 0.32 eV, confirming the photoresponsive potential in the MIR photodetection. The photocurrent response to the modulation signal was obtained at room temperature. In addition, signal processing through transimpedance and lock-in amplifiers enabled us to obtain characteristics with high linearity for light intensities in milliwatts. Light acquisition for 2.5–3.8-µm-long MIR wavelength became possible, and applications in gas sensing, including vibrational absorption bands of alkane groups, are expected.

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S/N ratio improvement of a nanocuboid array photodetector based on a Au/n-Si Schottky junction for broadband near-infrared light

Cited by 4 publications

References 31 publications

Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection

Si-based mid-infrared photodetector with dynamic Schottky barrier height modulation applicable for synchronous detection

Black silicon for near-infrared and ultraviolet photodetection: A review

Room-temperature plasmonic mid-infrared photodetector based on PtSi/p-Si low Schottky-barrier junction

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