Abstract-With aggressive technology scaling and heightened variability, circuits such as SRAMs and DRAMs have become vulnerable to random telegraph noise (RTN). The bias dependence (i.e., non-stationarity), bi-directional coupling, and high inter-device variability of RTN present significant challenges to understanding its circuit-level effects. In this paper, we present two computer-aided design (CAD) tools, SAMURAI and MUS-TARD, for accurately estimating the impact of non-stationary RTN on SRAMs and DRAMs. While traditional (stationary) analysis is often overly pessimistic (e.g., it overestimates RTNinduced SRAM failure rates), the predictions made by SAMURAI and MUSTARD are more reliable by virtue of non-stationary analysis.