Sapphire substrate misorientation effects on GaN nucleation layer properties

Influence of off-cut angle of r-plane sapphire on the crystal quality of nonpolar a-plane AlN by LP-HVPE

“…It is clearly seen that the plus off-angles of +0.21 to +1.0 1 benefit the decreased structural anisotropy of a-plane AlN and the minimum value appears in about +0.51. Such an optimal off-angle for the crystalline quality was reported by Lu et al [20]. They reported the good crystalline quality was acquired on the sapphire substrate with 0.31.…”

Activation energy of n-GaN epitaxial layers grown on vicinal-cut sapphire substrates

“…GaN epitaxial layers grown on 01 and 11 tilted sapphire substrates, respectively. From the charge neutrality equation, measured carrier concentration could be fitted by [12][13][14]:…”

HVPE growth of high quality GaN layers

“…Quite recently, several groups have reported that a slight substrate misorientation may improve the GaN layer quality considerably in MOVPE [6,7]. Our own preliminary experiments showed that this parameter may also be of major importance in HVPE [8].…”