2017
DOI: 10.1117/12.2258004
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SAQP and EUV block patterning of BEOL metal layers on IMEC's iN7 platform

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Cited by 5 publications
(3 citation statements)
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“…Metal process will continue to adopt selfaligned litho-etch-litho-etch (LELE) process with EUV lithography due to the needs for good overlay ( ≤ 2.5 nm) under ever-tightened design rules (CD~15-16 nm) [5,6] . Figure 9 is the process flow schematics.…”
Section: Metal Process Approach Discussionmentioning
confidence: 99%
“…Metal process will continue to adopt selfaligned litho-etch-litho-etch (LELE) process with EUV lithography due to the needs for good overlay ( ≤ 2.5 nm) under ever-tightened design rules (CD~15-16 nm) [5,6] . Figure 9 is the process flow schematics.…”
Section: Metal Process Approach Discussionmentioning
confidence: 99%
“…10(a) shows an example of CD-SEM enables one to measure overlay between SiN dense line patterned by self-aligned quadrupole patterning (SAQP) process and SiO block patterned by extreme ultraviolet (EUV) exposure. 52 Edge-to-edge (EE) overlay 4 between SAQP line edge and EUV block pattern tip should be controlled. It mainly depends on line width of SAQP, length of Block pattern, and overlay between SAQP and EUV block.…”
Section: Overlay Using Edge-to-edge Overlaymentioning
confidence: 99%
“…1 The hybrid option is to apply EUV exposure of blocks to create the tip-to-tips on the one-dimensional horizontal metal gratings achieved by ArFi-based self-aligned quadruple patterning (SAQP). 2 We can decompose these designs in generic building blocks, such as…”
Section: Introductionmentioning
confidence: 99%