Quantitative strain mapping of InAs/InP quantum dots with 1nm spatial resolution using dark field electron holography Appl. Phys. Lett. 99, 261911 (2011) Preparation of uncapped CdSe1−xSx semiconducting nanocrystals by mechanical alloying J. Appl. Phys. 110, 124306 (2011) Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiNx films Appl. Phys. Lett. 99, 243501 (2011) Dilute-nitride GaInAsN/GaAs site-controlled pyramidal quantum dots Appl. Phys. Lett. 99, 181113 (2011) Dynamics of interatomic Coulombic decay in quantum dots J. Chem. Phys. 135, 144112 (2011) Additional information on J. Appl. Phys. Structural and optical properties of InAlAs=GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy and temperature-and time-resolved photoluminescence. The control of the recombination lifetime (50 ps-1.25 ns) and of the dot density (5.10 -8 -2.10 11 cm -3 ) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non-linear dispersive materials as well as fast saturable absorbers.