Saturation behaviour of colloidal PbSe quantum dot exciton emission coupled into silicon photonic circuits

Foell, Charles; Schelew, Ellen; Qiao, Hao; Abel, Keith A.; Hughes, Stephen; Veggel, Frank C. J. M. van; Young, Jeff F.

doi:10.1364/oe.20.010453

Cited by 19 publications

(20 citation statements)

References 59 publications

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“…This paper describes the thorough characterization of fully integrated planar photonic circuits that were previously used [30] to channel excitonic emission from PbSe quantum dots into single-mode silicon waveguides, and then off-chip via grating couplers. The optical circuits, consisting of L3 photonic crystal microcavities symmetrically end-coupled to 1D photonic crystal waveguides that connect to 450 nm wide silicon channel waveguides and 2D photonic crystal grating couplers, were fabricated in SOI using a single-step, CMOS-compatible process at the IMEC foundry.…”

Section: Discussionmentioning

confidence: 99%

“…One class of alternative quantum oscillators are colloidal PbSe, PbS and PbSe/CdSe QDs that exhibit strong excitonic transitions at wavelengths m. A number of groups have successfully coupled excitonic emission from such QDs into isolated SOI cavities [24]- [30]. A significant advance was recently reported, where the excitonic emission from PbSe QDs was captured in a PPC microcavity, and transferred to single-mode channel Si waveguides, and then diffracted off-chip using PC grating couplers, using a CMOS-processed, full photonic circuit [30]. The overall efficiency of such a circuit depends both on the QD-cavity coupling electrodynamics, and the losses in and between the various photonic circuit building blocks.…”

Section: Introductionmentioning

confidence: 99%

“…The overall efficiency of such a circuit depends both on the QD-cavity coupling electrodynamics, and the losses in and between the various photonic circuit building blocks. The former, electrodynamic details were analyzed in detail in [30]. In this paper we present a thorough characterization of the entire photonic circuit used to transfer the excitonic emission into and out of single-mode silicon waveguides, and then off-chip.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Integrated Planar Photonic Crystal Circuits Fabricated by a CMOS Foundry

Schelew

Rieger

Young

2013

J. Lightwave Technol.

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Integrated planar photonic crystal circuits in silicon on insulator were fabricated with a single-etch-step process by a foundry using complementary metal-oxide-semiconductor processing techniques. The devices studied integrate three key elements: i) input/output grating couplers consisting of 2D uniform arrays of holes, ii) single transverse electric (TE)/single transverse magnetic (TM) mode channel waveguides, and iii) a photonic crystal linear three hole defect (L3) microcavity. Experimentally measured s-and p-polarized transmission, both from grating-to-grating through a uniform silicon slab region, and through the channel waveguide/L3 cavity circuit, were quantitatively compared with finite-difference time-domain simulations. Excellent agreement is achieved assuming circular, vertical side-wall holes, but this requires accurate post-fabrication characterization of actual versus nominal device parameters, including especially the silicon device layer thickness. While s-polarized incident radiation excites TE modes that exhibit typical resonant cavity (filter-like) transmission, p-polarized incident radiation excites TM modes that non-resonantly propagate through the circuit with comparable transmission efficiency. The dependence of the grating coupler tuning range on hole diameter, and the addition of a photoresist covering is determined.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Characterization of Integrated Planar Photonic Crystal Circuits Fabricated by a CMOS Foundry

Schelew

Rieger

Young

2013

J. Lightwave Technol.

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“…We estimated g ex for both our data sets and those of Chappell et al using measured laser powers and spot sizes, along with absorption coefficients from the literature [15]. The spontaneous emission rate of the lower emissive state was estimated from lifetime measurements of our drop-cast films and dielectric modeling we previously employed [16]. For both our samples and those of Chappell et al, we estimate g ex /N A γ A 10 −1 .…”

Section: Fit Methods and Extracted Parametersmentioning

confidence: 99%

Kinetic analysis of the temperature dependence of PbSe colloidal quantum dot photoluminescence: Effects of synthesis process and oxygen exposure

et al. 2014

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A kinetic model is derived and used to analyze recently published works and new data on the temperature dependence of the spectrally integrated photoluminescence (PL) from thick-film formulations of PbSe colloidal quantum dots (QDs), with particular attention to the effects of air exposure. The model assumes that the excitons thermalize within a ground-state manifold of states and treats the distribution of radiative and nonradiative decay rates within the distribution as generally as possible, while using a minimal number of free parameters. By adjusting the parameters of the model, good fits are obtained for the wide range of integrated PL behaviors reported in [J. Phys. Chem. Lett. 2, 889 (2011); ACS Nano 6, 5498 (2012); Phys. Rev. B 82, 165435 (2010)] and the new data presented in this manuscript. By comparing the extracted parameters we deduce the following: (i) All of the samples in the first two references emit from two distinct clusters of states separated by an energy of 55 to 80 meV regardless of air exposure, while there is only one cluster of emissive states that contributes to the emission reported in the third reference. (ii) In the absence of intentional air exposure, the nonradiative decay from all samples can be described by a single Arrhenius-like process. (iii) Although air-exposure effects are reversible in some samples and irreversible in others, the changes in integrated PL behavior brought about by air-exposure forces the introduction of a common, low-activation-energy nonradiative pathway in all cases.(iv) The low-lying emissive cluster of the two-emissive-cluster samples exhibits behavior similar to the single emissive cluster of the other samples. (v) Many hours of air exposure do not trend either the radiative or nonradiative behavior of the dual-emissive-cluster samples towards the behavior of the single-emissive-cluster samples.

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“…Colloidal quantum dots (QDs), with their efficient luminescence, tunable from the visible to the infrared wavelength, potentially could be used as the emitters in photonic applications. In fact, colloidal QDs have already been integrated with various types of photonic integrated circuits (PIC), including polymer matrix and waveguides [10][11][12], silicon photonic circuits [13,14] and SiN nanocavities [15]. In all these examples, the QDs were either stabilized in a polymer matrix or directly dispersed on the surface of the devices.…”

Section: Introductionmentioning

confidence: 99%

Low-loss silicon nitride waveguide hybridly integrated with colloidal quantum dots

Wang¹,

Zhu²,

Aubert³

et al. 2015

Opt. Express

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Silicon nitride waveguides with a monolayer of colloidal quantum dots embedded inside were fabricated using a low-temperature deposition process and an optimized dry etching step for the composite layers. We experimentally demonstrated the luminescence of the embedded quantum dots is preserved and the loss of these hybrid waveguide wires is as low as 2.69dB/cm at 900nm wavelength. This hybrid integration of low loss silicon nitride photonics with active emitters offers opportunities for optical sources operating over a very broad wavelength range. References and links1. E. S. Hosseini, S. Yegnanarayanan, A. H. Atabaki, M. Soltani, and A. Adibi, "High quality planar silicon nitride microdisk resonators for integrated photonics in the visible wavelength range," Opt.

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Saturation behaviour of colloidal PbSe quantum dot exciton emission coupled into silicon photonic circuits

Cited by 19 publications

References 59 publications

Characterization of Integrated Planar Photonic Crystal Circuits Fabricated by a CMOS Foundry

Characterization of Integrated Planar Photonic Crystal Circuits Fabricated by a CMOS Foundry

Kinetic analysis of the temperature dependence of PbSe colloidal quantum dot photoluminescence: Effects of synthesis process and oxygen exposure

Low-loss silicon nitride waveguide hybridly integrated with colloidal quantum dots

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