1991
DOI: 10.1002/crat.2170260605
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Saturation Behaviour of In – Ga – As Melts and Growth of In.53Ga.47As Lattice‐matched to (001) InP Substrates

Abstract: Saturation Behaviour of In -Ga -As Melts and Growth of In.,,Ga.,,As Lattice-matched to (001) InP Substrates This paper presents the saturation behaviour of In -Ga-As melts with monocrystalline GaAs. The coulometric As-analysis confirmed that the source-seed-technique produces In -Ga -As melts of defined compositions. The growth results of the step cooling technique applying both the source-seed technique and the single phase melts are compared.In dieser Arbeit wird das Sattigungsverhalten von In -Ga -As Schmel… Show more

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