Saturation of optical gain in ZnSe heterostructures

Kalt, H.; Umlauff, M.; Kraushaar, M.; Scholl, M.; Söllner, J.; Heuken, M.

doi:10.1016/s0022-0248(98)80132-2

Cited by 24 publications

(14 citation statements)

References 7 publications

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“…The inhomogeneous carrier distribution has been explained theoretically in terms of the interaction of the carrier and photon densities, where temporal variations in the coupled carrier and photon density are attributed to spontaneous and stimulated emission, diffusion, and losses due to photon refraction, scattering, and nonradiative decay. 13 The carrier density increases significantly with increasing stripe length up to 100 m, beyond which a rapid reduction in the carrier density occurs up to ϳ120 m. Thereafter, the carrier density decreases very slowly. This is consistent with the stripe length dependence of the gain saturation in Fig.…”

Section: Polarization Asymmetry and Optical Modal Gain Saturation Viamentioning

confidence: 93%

Polarization asymmetry and optical modal gain saturation via carrier–photon interaction in ZnO

Kim

Park

et al. 2010

Applied Physics Letters

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Section: Polarization Asymmetry and Optical Modal Gain Saturation Viamentioning

confidence: 93%

Polarization asymmetry and optical modal gain saturation via carrier–photon interaction in ZnO

Kim

Park

et al. 2010

Applied Physics Letters

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“…17 However, it is sometimes quite difficult to evaluate quantitatively the gain spectra obtained by this method, because saturation effects occur when the stripe length is too large. 18 On the other hand, the VSLM has an essential advantage: the stripe-type excitation provides a large distance over which light amplification can occur. Stimulated emission increases exponentially with distance along the excitation stripe, while the rise of spontaneous emission is only linear.…”

Section: Stimulated Emission and Gainmentioning

confidence: 99%

Optical properties of (AlxGa1−x)0.52In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor

Dörr

Schwarz

Wörner

et al. 1998

Journal of Applied Physics

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. Optical properties of (AlxGa1-x)(0.52)In0.48P at the crossover from a direct-gap to an indirect-gap semiconductor. Journal of Applied Physics, 83(4), 2241 -2249 . DOI: 10.1063 Optical properties of "Al x Ga 1؊x … 0.52 In 0.48 P at the crossover from a direct-gap to an indirect-gap semiconductor The optical properties and the dynamics of excitons and the electron-hole plasma have been studied in disordered (Al x Ga 1Ϫx ) 0.52 In 0.48 P near to the direct-to-indirect band gap crossover. In particular we have investigated three epitaxial layers grown by solid-source molecular beam epitaxy with varying Al content x. Two of them have compositions in the immediate vicinity of the crossover point, the other is assigned to the indirect-gap regime. Both direct and indirect recombination processes contribute to the photon emission from the material. Since the relative importance of the different recombination processes depends strongly on temperature, excitation intensity, and excitation pulse duration, the processes can be identified by changing these parameters. As a result, we can determine the relative alignment of the conduction band minima and the distribution of the electrons among them. At high excitation levels the two crossover samples show stimulated emission at a photon energy of ϳ2.29 eV, i.e., in the green spectral range. Using the variable stripe length method, we find an optical gain of up to ϳ600 cm Ϫ1 at excitation levels of ϳ350 kW/cm 2 . Stimulated emission involves direct recombination. This conclusion is reached from the experiments and from line-shape modeling, including a self-consistent treatment of populations and renormalization of the conduction band minima.

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“…One of the drawbacks of the ͗l /2l͘ method is that it requires two data points eventually too far apart from each other, which will be discussed below. This often leads to gain saturation, 11,13 and the gain value is underestimated. On the other hand, the advantage of this method is the existence of an analytical solution to the equation.…”

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confidence: 99%