Polarization asymmetry and optical modal gain saturation via carrier–photon interaction in ZnO

Abstract

Electron irradiation effects on electrical and optical properties of sol-gel prepared ZnO films

Synchrotron X-ray diffraction studies of heteroepitaxial ZnO films grown by pulsed laser deposition

“…Many efforts have already been made to grow high-quality ZnO films with low defect densities and to characterize their structural properties [3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. However, in order to speed up the practical application of ZnO films to optoelectronic devices, studies regarding the nature of heteroepitaxial ZnO films are still necessary.…”

“…Obtaining high-quality single crystalline ZnO films is particularly important for optoelectronic devices, in which the performance is highly sensitive to the crystalline quality of the films. Most epitaxial ZnO films have been grown on single crystal substrates including sapphire [3][4][5], GaAs [6][7][8], CaF 2 [9][10][11], ScAlMgO 4 [12,13], and GaN [14][15][16].…”

Epitaxial Growth of ZnO Films on ZnO-Buffered Al2O3 (0001) in Water at 95°C

“…For advanced applications of ZnO, single crystals in the form of thin films and a high degree of purity are required. Several groups 3–18 have pursued growth of ZnO films, and the progress in improving quality and purity is significant. Having high‐quality single crystalline ZnO films is especially important for optoelectronic devices in which the performance is highly sensitive to the crystalline quality of the films.…”

“…Having high‐quality single crystalline ZnO films is especially important for optoelectronic devices in which the performance is highly sensitive to the crystalline quality of the films. Most ZnO epitaxial films have been grown on single‐crystal substrates including sapphire, 3,4 GaAs, 5,6 CaF 2 , 7,8 ScAlMgO 4 , 9,10 and GaN 11,12 …”

Surface-plasmon-assisted modal gain enhancement in Au-hybrid CdSe/ZnS nanocrystal quantum dots

“…Modal gain contour maps were obtained using the variable stripe length method (VSLM) with 473 nm continuous wave laser at 40 mW pumping power. 10 A rough metal surface is advantageous for SP-assisted enhancement, because the locally enhanced electromagnetic field of the metal nanostructures results in effective NQD excitation, and large-wavevector SPs are efficiently scattered and coupled to light. 2,3 Fig.…”