Field-Effect transistors placed in the propagation path of a surface acoustic wave are attractive detectors in programmable tapped delay lines. The F E T detector output can be controlled electronically by varying the biased gate voltage. In the past, MOSFETs in silicon applying the piezoresistance or piezoelectric effect, and MESFETs in GaAs have been used.In this paper the Junction F E T (JFET) is considered as a new, active SAW detector. In contrast to the F E T detectors just mentioned, the J F E T can be designed without any metal gate structures in the SAW propagation path, since the gate consists of an implanted or diffused semiconductor structure. This results in a smooth surface, which reduces intertap reflections and improves the growth of the ZnO layer. The J F E T fabrication is fully IC compatible, and electronic drive and control circuitry can be added to obtain a fully integrated, programmable filter.Monolithic test devices operating at 95 MHz have been realized in a ZnO-Si02-Si layered structure. The pt gates of the n-channel JFETs are ion-implanted through a 0.1 pm thick oxide in an n--type epilayer. Source and drain areas are formed by nt diffusions. The metal contacts to the source, drain and gate are placed outside the SAW propagation path.