SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

Shigekawa, Naoteru; Nishimura, K.; Suemitsu, Tetsuya; Yokoyama, Haruki; Hohkawa, K.

doi:10.1109/led.2006.889043

Cited by 14 publications

(3 citation statements)

References 15 publications

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“…[19], although they are limited by thickness-dependent resonance frequency. Devices with multiple frequencies on the same chip are possible, utilizing lithographically defined interdigital switchable transducers to launch and sense surface acoustic waves (SAWs) [20][21][22][23]. However, these are subject to high mechanical losses at high frequency and low acoustic velocity, which further limits their frequency scaling due to limits of lithographic resolution.…”

Section: Introductionmentioning

confidence: 99%

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Ahmed

Weinstein

2021

Micromachines

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This work presents a comprehensive comparison of switchable electromechanical transducers in an AlN/GaN heterostructure toward the goal of reconfigurable RF building blocks in next-generation ad hoc radios. The transducers’ inherent switching was achieved by depleting a 2D electron gas (2DEG) channel, allowing an RF signal launched by interdigital transducers (IDTs) to effectively excite the symmetric (So) Lamb mode of vibration in the piezoelectric membrane. Different configurations for applying DC bias to the channel for electromechanical actuation in the piezoelectric are discussed. Complete suppression of the mechanical mode was achieved with the transducers in the OFF state. Equivalent circuit models were developed to extract parameters from measurements by fitting in both ON and OFF states. This is the first time that an extensive comparative study of the performance of different switchable transducers in their ON/OFF state is presented along with frequency scaling of the resonant mode. The switchable transducer with Ohmic IDTs and a Schottky control gate showed superior performance among the designs under consideration.

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Section: Introductionmentioning

confidence: 99%

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Ahmed

Weinstein

2021

Micromachines

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“…(a) E-mail: zhaotl@xidian.edu.cn (corresponding author) It is the piezoelectric properties of GaN materials that enable GaN-based devices to improve device performance by adjusting the concentration of 2-DEG in stress engineering [10][11][12][13], strain engineering [5,14], and polarization engineering [15,16], so as to meet different application conditions. Moreover, GaN-based devices promise widely application in many other fields as well, such as pressure sensor [17], stress/strain sensor [18] and acoustic surface wave filters [19], due to piezoelectric properties. In summary, the piezoelectric effect in GaN-based devices has been widely recognized and deeply applied in practical environment.…”

mentioning

confidence: 99%

Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping

Wang¹,

Chai²,

Zhao³

et al. 2023

EPL

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As known, the piezoelectric polarization effect makes GaN HEMT have unique electrical characteristics and more widely applications compared with other III-V semiconductor devices. In this letter, a novel electromechanical coupling theory is proposed and verified for the first time for the GaN HEMT heterojunction structure by applying the mechanical clamping boundary conditions in piezoelectric constitutive equations. The total piezoelectric polarization defined as Pcouple in this new electromechanical coupling theory consist of three parts: the spontaneous polarization Psp, the strain-induced piezoelectric polarization Pstrain due to lattice mismatch in growth, and the bias dependent piezoelectric polarization PEz. The output and transfer characteristics of GaN HEMT have been simulated based on the new electromechanical coupling theory and verified in agreement with the experimental results in trend. This theory helps to extend the understanding of the basic physical mechanism of AlGaN/GaN interface and is of great significance to device design and application for GaN-based materials.

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“…1 The insertion loss of a SAW filter on an AlGaN/GaN system has been demonstrated to be governed, via the field effect, by the depletion of the two-dimensional electron gas ͑2DEG͒ underneath the interdigital transducers ͑IDTs͒. 2,3 The piezoelectric transduction, screened initially by the 2DEG, is recovered when the IDTs, formed by Schottky contacts 2 or combinations of Schottky and Ohmic contacts, 4 are reverse biased. In addition, the interaction of the electric fields accompanying the SAW with the mobile carriers of the 2DEG is expected to modify the phase velocity, 5 as shown in voltage-controlled devices in GaAs/ LiNbO 3 hybrids 6 or AlGaAs/GaAs systems with a very deep 2DEG ͑0.5 m͒.…”

mentioning

confidence: 99%

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

Pedrós

Calle

Cuerdo

et al. 2010

Applied Physics Letters

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A voltage tunable surface acoustic wave (SAW) phase shifter on a two-dimensional electron gas (2DEG) AlGaN/GaN heterostructure has been developed. The acoustoelectric interaction is field-effect modulated by means of an insulated gate placed in the acoustic path of a SAW delay line. The phase velocity under the gate is tuned by modifying the conductance of the 2DEG with a dc bias, while the insulating layer prevents the screening of the SAW piezoelectric fields by the gate. The device is compatible with the nitride transistor technology for signal processing and frequency control applications.

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SAW Filters Composed of Interdigital Schottky and Ohmic Contacts on AlGaN/GaN Heterostructures

Cited by 14 publications

References 15 publications

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Switchable Transducers in GaN MEMS Resonators: Performance Comparison and Analysis

Novel electromechanical coupling theory of GaN HEMT structure under mechanical clamping

Voltage tunable surface acoustic wave phase shifter on AlGaN/GaN

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