Sb-Based Mid-Infrared Diode Lasers

Mermelstein, C.; Rattunde, M.; Schmitz, J.; Simanowski, S.; Walther, M.; Wagner, J.

doi:10.1557/proc-692-h8.1.1

Cited by 3 publications

(1 citation statement)

References 14 publications

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“…The fast axis divergence is reduced from 67 • to 44 • FWHM, compared to a conventional broadened waveguide design [11][12][13] . This new waveguide exhibits low Al-content cladding layers (50 %), thin 140 nm SCLs and a modified doping profile in the p-doped cladding layer.…”

Section: Discussionmentioning

confidence: 94%

GaSb-based 1.9- to 2.4-μm quantum well diode lasers with low-beam divergence

et al. 2005

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We present results on low beam divergence, low threshold current GaSb-based quantum-well diode lasers emitting in the 1.9 -2.4 µm wavelength range. By carefully designing the active quantum-well region, low threshold current densities in the range of 148 to 190 A/cm 2 could be achieved in the entire wavelength range. A novel structure for the epitaxial waveguide was designed and realized experimentally, leading to a reduced beam divergence in the fast axis of 44 • full width at half maximum (FWHM), compared to 67 • FWHM of a conventional broadened waveguide design. This improvement was achieved without any sacrifice in the laser performance, i.e. the novel laser structure showed the same threshold current I th and differential quantum efficiency η d as the standard one. Ridge-waveguide lasers employing the new waveguide design and emitting at 2.3 µm were operated in an external cavity configuration. Due to the improved coupling efficiency of the laser beam into the collimating optic, a wide tuning range of 130 nm could be achieved, limited only by the gain bandwidth of the active material.

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Section: Discussionmentioning

confidence: 94%