Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

Boos, J.B.; Bennett, B. R.; Papanicolaou, N.; Ancona, Mario G.; Champlain, James G.; Chou, Y.C.; Lange, M.; Yang, J.M.; Bass, R.; Park, Doewon; Shanabrook, B. V.

doi:10.1093/ietele/e91-c.7.1050

Cited by 29 publications

(19 citation statements)

References 17 publications

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“…One enticing approach is to replace the Si channel with high intrinsic hole mobility Ge for p-channel device compared to III-V p-channel material. [8][9][10] Alternative approaches are different surface orientations to improve the carrier mobility, [11][12][13][14] strain engineering, 11,15,16 device architecture, 8,9,17 and optimal channel direction. [19][20][21][22][23] Research efforts are currently devoted towards investigation of the Ge as channel material, since higher intrinsic carrier mobility of Ge can provide a larger drive current, and its smaller bandgap can enable operation at a lower voltages.…”

Section: Introductionmentioning

confidence: 99%

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait

Zhu

Maurya

et al. 2013

Journal of Applied Physics

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Structural and band alignment properties of atomic layer Al2O3 oxide film deposited on crystallographically oriented epitaxial Ge grown in-situ on (100), (110), and (111)A GaAs substrates using two separate molecular beam epitaxy chambers were investigated using cross-sectional transmission microscopy (TEM) and x-ray photoelectron spectroscopy (XPS). High-resolution triple axis x-ray measurement demonstrated pseudomorphic and high-quality Ge epitaxial layer on crystallographically oriented GaAs substrates. The cross-sectional TEM exhibited a sharp interface between the Ge epilayer and each orientation of the GaAs substrate as well as the Al2O3 film and the Ge epilayer. The extracted valence band offset, ΔEv, values of Al2O3 relative to (100), (110), and (111) Ge orientations using XPS measurement were 3.17 eV, 3.34 eV, and 3.10 eV, respectively. Using XPS data, variations in ΔEv related to the crystallographic orientation were ΔEV(110)Ge>ΔEV(100)Ge≥ΔEV(111)Ge and the conduction band offset, ΔEc, related to the crystallographic orientation was ΔEc(111)Ge>ΔEc(110)Ge>ΔEc(100)Ge using the measured ΔEv, bandgap of Al2O3 in each orientation, and well-known Ge bandgap of 0.67 eV. These band offset parameters are important for future application of Ge-based p- and n-channel metal-oxide field-effect transistor design.

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Section: Introductionmentioning

confidence: 99%

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Hudait

Zhu

Maurya

et al. 2013

Journal of Applied Physics

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“…They have continued to use this contact for both n-channel (InAs) and p-channel (InGaSb) devices. 58 For n-channel devices, contact resistances of 0.03 Ω mm were achieved. The metallurgy of this contact merits some discussion.…”

Section: Ohmic Contacts For Iii-v Hemt and Mos Devicesmentioning

confidence: 99%

Source and Drain Contacts for Germanium and III–V FETs for Digital Logic

Dimoulas¹,

Toriumi²,

Mohney³

2009

MRS Bull.

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The scaling of transistors to smaller dimensions and the exploration of devices with III-V and Ge channels for digital logic places serious demands on the ohmic contacts used in these devices. Contacts with extremely low specific contact resistances are required to take full advantage of the performance promised by alternative semiconductor materials. In addition, device processes and contact morphologies must be compatible with the geometry and feature sizes of the transistors. In this article, we begin by reviewing what is known about contacts to Ge, InGaAs, InAs, and InSb, including the role of Fermi level pinning on the Schottky barrier that is often formed at the metal/semiconductor interface and common strategies for forming ohmic contacts. Then we turn our attention to the additional challenges faced when preparing ohmic contacts for the many types of field-effect transistors now under development for Ge and III-V complementary field-effect transistor technology.

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“…With In 0.4 Ga 0.6 Sb as the channel in a p-FET, a maximum transconductance of 133 mS/mm was achieved [14]. For a 200 nm gate length, the cutoff frequency, f T , was 19 GHz, and the maximum oscillation frequency, f max , was 34 GHz [15]. Lower access resistance is expected to lead to improvements in both DC and RF performance.…”

Section: Article In Pressmentioning

confidence: 99%

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

Bennett¹,

Ancona²,

Champlain³

et al. 2009

Journal of Crystal Growth

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Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

Cited by 29 publications

References 17 publications

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Structural and band alignment properties of Al2O3 on epitaxial Ge grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy

Source and Drain Contacts for Germanium and III–V FETs for Digital Logic

Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits

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