Sb-based semiconductors for low power electronics

Yeh, Nien Tze; Chiu, Pei C.; Chyi, Jen Inn; Ren, F.; Pearton, S. J.

doi:10.1039/c3tc30585f

Cited by 25 publications

(12 citation statements)

References 86 publications

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“…In x Ga 1−x Sb晶体可以通过改变In含量进行光电性能调控, 其晶格常数和吸收波长在6.4794-6.0959 Å和 1.7-6.8 μm范围内控制, 可以制备成高性能的红外探测器、传感器以及热光伏电池等 [1][2][3] . In的加入不仅可以调控In x Ga 1−x Sb晶体的带隙, 而且会占据GaSb晶格结构中的Ga空位(V Ga ), 从而减少其空位缺陷 [4] .…”

Section: 引言unclassified

Study on crystal growth of In<italic>x</italic>Ga1−<italic>x</italic>Sb under microgravity

Fang

Xia

Wang

et al. 2020

Sci. Sin.-Phys. Mech. Astron.

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Section: 引言unclassified

Study on crystal growth of In<italic>x</italic>Ga1−<italic>x</italic>Sb under microgravity

Fang

Xia

Wang

et al. 2020

Sci. Sin.-Phys. Mech. Astron.

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“…4,5 For the p-channel FET, strain-engineered channels with high-Ge-content SiGe and pure Ge are attractive candidates due to the high hole mobilities which can be achieved. 6 Other attractive p-channel candidates for III-V CMOS are strained antimonides, 7,8 which have also been shown to exhibit high hole mobilities. [9][10][11][12][13][14][15] The unstrained hole mobilities of III-V compounds are generally low, so researchers have exploited quantum confinement and strain as a means of splitting the heavy-hole and light-hole valence bands, giving lower in-plane hole masses and enhanced low-field mobility.…”

Section: Introductionmentioning

confidence: 99%

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Bennett

Podpirka

Boos

et al. 2016

Journal of Elec Materi

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Quantum wells of InGaSb clad by AlGa(As)Sb were grown by molecular beam epitaxy. Well and barrier compositions were chosen to yield biaxial compressive strain and enhanced hole mobility in the InGaSb. Wells with thickness of 7.5 nm exhibited room-temperature mobilities of 1000 cm 2 /V s to 1100 cm 2 / V s, with the surface-layer material influencing two-dimensional hole densities. The introduction of As into the barrier material allows a wider range of p-channel well/barrier combinations and lattice constants. These could be compatible with n-channel InGaAs wells for complementary field-effect transistor circuits which utilize a common buffer layer. InGaSb wells with thicknesses of 20 nm to 30 nm and compressive strains of 1.0% to 1.5% exhibited hole mobilities of 700 cm 2 /V s to 900 cm 2 /V s.

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“…28 The layer-layer coupling capability is relevant for the development of the CMOS technology, based on the integration between III-V compounds and Si. 29 In addition, the GaSb compound is an attractive material for this kind of integration technology, [30][31][32][33] and electronic effects such as band-to-band tunneling, 33 ferroelectric properties, 34 and biocompatibility studies 35 that can be efficiently used in FET, based on integration technology and sensor designs.…”

Section: Introductionmentioning

confidence: 99%

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

Calderón

Dussán

2021

J. Electron. Mater.

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This work presents a study of the morphological and structural properties of GaSb and GaSb/Mn thin films as support for the construction of GaSb/Mn multilayer systems deposited on Si (001) wafer substrate for electronic and spintronic applications. Thin films were obtained through DC magnetron sputtering, and the GaSb thin film was subjected to high-vacuum annealing for 2 h, 4 h, 6 h, 8 h and 10 h. The morphological properties were studied by SEM micrographs. It was observed that the width of depression regions on the GaSb thin film surface decreased (from ~ 617 nm to ~ 56 nm) when the annealing time was increased. A fast Fourier transform filter allowed identifying the formation of grains on the surface of the sample. The dependence of the grain size on the annealing times was described through the abnormal model. XRD measurements and the Burke-Turnbull model were used for establishing the dependence between GaSb crystallite size and annealing times. From Auger spectra, it was possible to determine the Ga diffusion process, its high mobility in the GaSb matrix, and its relationship with morphological properties. It was observed that the thermal processes favor the GaSb phase formation and the increase of grain size on the surface of the sample. AFM micrographs showed the topographical characteristics of the GaSb thin films surface and MFM images presented an exploration of the magnetic behavior for the bilayer system. Loops in hysteresis at 50 K were observed through measurements of the vibrating sample magnetometer, for the [GaSb/Mn] 3 sample fabricated at room temperature (T s = 300 K). These loops have been attributed to the magnetic anisotropy conditions generate through unbalanced Mn magnetic moments due to the Mn antiferromagnetic property presented at this temperature and the diffuse interfaces between GaSb and Mn layers. Lastly, the study of morphological properties of single-layer GaSb and its dependence on annealing times allowed determining that GaSb/Mn multilayer systems fabricated at room temperature present diffuse interfaces, although with clearly distinguished layers, and represent an alternative option for their fabrication.

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Sb-based semiconductors for low power electronics

Cited by 25 publications

References 86 publications

Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity

Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

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Sb-based semiconductors for low power electronics

Cited by 25 publications

References 86 publications

Study on crystal growth of In&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Ga&lt;sub&gt;1&minus;&lt;/sub&gt;&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Sb under microgravity

Study on crystal growth of In&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Ga&lt;sub&gt;1&minus;&lt;/sub&gt;&lt;sub&gt;&lt;italic&gt;x&lt;/italic&gt;&lt;/sub&gt;Sb under microgravity

Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors

Thermal Annealing Effect on GaSb Thin Films Deposited on Si (001) for Assembly of GaSb/Mn Multilayer Systems at Room Temperature

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Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity

Study on crystal growth of In<sub><italic>x</italic></sub>Ga<sub>1−</sub><sub><italic>x</italic></sub>Sb under microgravity