2011
DOI: 10.1016/j.jallcom.2011.02.080
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Sb doping behavior and its effect on crystal structure, conductivity and photoluminescence of ZnO film in depositing and annealing processes

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Cited by 43 publications
(11 citation statements)
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“…These properties make the ZnO an important semiconductor for various applications in optoelectronic devices such as UV light-emitting diodes, laser diodes and photodetectors [1,3]. To reach such goals, the fabrication of stable and reproducible n and p-type ZnO with excellent electrical and optical properties are very important [1,4,5].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…These properties make the ZnO an important semiconductor for various applications in optoelectronic devices such as UV light-emitting diodes, laser diodes and photodetectors [1,3]. To reach such goals, the fabrication of stable and reproducible n and p-type ZnO with excellent electrical and optical properties are very important [1,4,5].…”
Section: Introductionmentioning
confidence: 99%
“…It has been suggested that p-type doping in ZnO can be achieved through substituting either group I elements, such as Na [11], K [12] or Li [13] with Zn or group V elements, such as N [10], P [14], As [5] or Sb [3] for oxygen. Furthermore, Li-N [9] and Al-N [2] co-doped ZnO films have also been studied to produce p-type ZnO.…”
Section: Introductionmentioning
confidence: 99%
“…Al:As co-doped ZnO thin film synthesized using magnetron sputtering and Sb:Al co-doped ZnO thin films synthesized using sol-gel also confirms the p-type doping of the samples [20,21]. In addition annealing of these codoped thin films will lead to significant change in their structural, optical and electronics properties [22]. However there are limited on reports in synthesizes of co-doped ZnO nano structures and characterization of their properties towards functional device applications.…”
Section: Introductionmentioning
confidence: 53%
“…Thus far, several experimental [9][10][11][12] and theoretical investigations [13][14][15] to obtain p-type ZnO have been reported. In recent years, P [16], N [17], As [18], Sb [19], Ag [20], Al-N co-doped [21] and Li-N co-doped [22] have been studied extensively as promising dopants for p-type ZnO. The introduction of these dopants and defect complexes during fabrication has been reported to change the type of conductivity, as well as the optical and electrical properties.…”
Section: Introductionmentioning
confidence: 99%