Sb2Se3 is a promising material for use in
photovoltaics, but the optimum device structure has not yet been identified.
This study provides band alignment measurements between Sb2Se3, identical to that used in high-efficiency photovoltaic
devices, and its two most commonly used window layers, namely, CdS
and TiO2. Band alignments are measured via two different
approaches: Anderson’s rule was used to predict an interface
band alignment from measured natural band alignments, and the Kraut
method was used in conjunction with hard X-ray photoemission spectroscopy
to directly measure the band offsets at the interface. This allows
examination of the effect of interface formation on the band alignments.
The conduction band minimum (CBM) of TiO2 is found by the
Kraut method to lie 0.82 eV below that of Sb2Se3, whereas the CdS CBM is only 0.01 eV below that of Sb2Se3. Furthermore, a significant difference is observed
between the natural alignment- and Kraut method-determined offsets
for TiO2/Sb2Se3, whereas there is
little difference for CdS/Sb2Se3. Finally, these
results are related to device performance, taking into consideration
how these results may guide the future development of Sb2Se3 solar cells and providing a methodology that can be
used to assess band alignments in device-relevant systems.