Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors

Si, Jia; Zhong, Donglai; Xu, Haitao; Xiao, Mi; Yu, Chenxi; Zhang, Zhiyong; Peng, Lian‐Mao

doi:10.1021/acsnano.7b07665

Cited by 62 publications

(51 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[26] However, these films consist of many stacked layers of nanotubes. These methods include directional chemical vapor deposition, [30][31][32][33] Langmuir-Blodgett [34] and Schaefer [35] strategies, floating evaporative self-assembly, [36][37][38] directed evaporation, [39][40][41] and elastomeric release, [42] among others. [27][28][29] Methods have been pursued for the more specialized alignment of nanotubes specifically for thin film electronics applications.…”

Section: Introductionmentioning

confidence: 99%

Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Jinkins

Chan

Jacobberger

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

of highly aligned, individualized, electronics-grade semiconducting nanotubes are needed. These nanotubes must be uniformly deposited over large-area substrates at an intermediate linear packing density of 50-200 nanotubes µm −1 . [6,7] Alignment is important, as it decreases the number of resistive nanotube-nanotube junctions in the charge percolation pathway, thereby enabling high transistor drive current and mobility. [8,9] Moreover, nanotube individualization and control over packing density are important because the bundling and the formation of multilayers of tubes at high packing densities can result in transistors with low on/off conductance modulation ratio due to electrostatic screening. [10,11] Bundles and multilayers can also decrease on-current due to difficulties in forming low-resistance electrical contacts to tightly spaced nanotubes. [12] On the other hand, if the density of nanotubes is too low, then there are an insufficient number of charge conducting pathways, resulting in poor on-current and mobility. Individualization is also imperative in applications such as sensors, in which the nanotube surface area must be maximized to increase the number of accessible sites for analyte binding. [13] Driving nanotube alignment has been difficult, by itself, but concurrently realizing control over packing density, nanotube individualization, uniformity, and large-area scaling has been especially challenging. Most conventional approaches for depositing nanotubes onto substrates (e.g., spin, [14] blade, [15] and drop casting [16] ; spraying [17,18] ; and vacuum filtration [19,20] ) yield films of nanotubes that are randomly oriented. Strategies for aligning nanotubes have been pursued; however, many of these approaches have been developed without thin film transistors in mind. For example, the alignment of multiwalled carbon nanotubes has been demonstrated extensively; yet, multiwalled carbon nanotubes are semimetallic and thus are not suitable for transistors. [21,22] Furthermore, techniques for aligning multiwalled carbon nanotubes are generally difficult to translate to aligning single-walled carbon nanotubes, which are considerably smaller than multiwalled nanotubes. The alignment of nanotubes in polymer matrices has also received substantial attention, but this technique yields bulk composites rather than single layers of tubes on surfaces. [23][24][25] Likewise, recent work To exploit their charge transport properties in transistors, semiconducting carbon nanotubes must be assembled into aligned arrays comprised of individualized nanotubes at optimal packing densities. However, achieving this control on the wafer-scale is challenging. Here, solution-based shear in substrate-wide, confined channels is investigated to deposit continuous films of well-aligned, individualized, semiconducting nanotubes. Polymerwrapped nanotubes in organic ink are forced through sub-mm tall channels, generating shear up to 10 000 s −1 uniformly aligning nanotubes across substrates. The ink volume and concentration, channe...

show abstract

Section: Introductionmentioning

confidence: 99%

Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Jinkins

Chan

Jacobberger

et al. 2018

Adv Elect Materials

View full text Add to dashboard Cite

show abstract

“…FETs fabricated using these films have attained record high performance for SWCNT FETs based on CVD-grown SWCNTs, further confirming the effectiveness of this method. [106] While solution-processed s-SWCNTs are widely used in high-performance SWCNT FETs, the large parameter space for solution-processing methods (e.g., temperature, solvent, and surfactant concentrations) makes optimization challenging. Nevertheless, extensive studies have advanced the understanding of processing-property relationships for solution-based methods.…”

Section: Progress In Processing Of Conventional Swcnt Devicesmentioning

confidence: 99%

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Rojas

Hersam

2020

Advanced Materials

View full text Add to dashboard Cite

electronic, [3-4,4] and functional requirements. [5] Conventional silicon integrated circuit (IC) technology faces significant challenges in meeting these demands due to its limited mechanical flexibility, high temperature processing, and scaling limitations. Emerging alternative computing platforms based on other crystalline semiconductors suffer from similar limitations. Consequently, nextgeneration computing necessitates the exploration of radically different electronic materials. Single-walled carbon nanotubes (SWCNTs) are among the most promising and highly studied nanoelectronic materials. Due to their small size, [6,7] solutionprocessability, [8] chemical stability, [9] and chirality-dependent optoelectronic properties, [10] SWCNTs offer a number of unique advantages and are compatible with the complex requirements of future computing devices. Recent advances in chiral enrichment of polydisperse SWCNTs [8,10] have allowed their use as semiconducting channels in diverse settings including charge transport devices, [2] optical emitters and detectors, [11,12] and chemical sensors. [2,3,13,14] With this tunable functionality, a range of SWCNT-based computing applications have been realized, such as printed digital logic, [15] sub-10 nm complementary metal-oxide-semiconductor (CMOS) field-effect transistors (FETs), [16] neuromorphic devices, [17] single-photon emitters (SPE), [18] and enantiomer-recognition sensors. [14] Herein, we discuss recent advances in SWCNT-based computing technologies that process, manage, and communicate information, with an emphasis on the enabling role of chiral enrichment. Section 2.1 defines the different levels of chiral enrichment. Sections 2.2 and 2.3 describe direct growth methods and post-processing purification of SWCNTs for electronic-type and monochiral enrichment. Section 3 discusses applications of electronic-type-enriched SWCNTs such as wearables, highly scaled FETs, 3D logic-memory integration, and neuromorphic devices. Section 4 outlines applications of monochiral-enriched SWCNTs including monochiral FETs, optical emitters, photodetectors, and optoelectronic ICs. Section 5 considers recent progress toward enantiomerically pure SWCNTs. Finally, Section 6 presents an outlook for SWCNTs in next-generation computing applications including a delineation of remaining challenges and future opportunities. For the past half century, silicon has served as the primary material platform for integrated circuit technology. However, the recent proliferation of nontraditional electronics, such as wearables, embedded systems, and lowpower portable devices, has led to increasingly complex mechanical and electrical performance requirements. Among emerging electronic materials, single-walled carbon nanotubes (SWCNTs) are promising candidates for next-generation computing as a result of their superlative electrical, optical, and mechanical properties. Moreover, their chirality-dependent properties enable a wide range of emerging electronic applications including sub-10 nm complementary fie...

show abstract

“…This means that once CNTs are synthesized, they need a further purification and sorting step. Although these purification protocols have now become very effective and it is possible to separate metallic CNTs from semiconducting ones [96][97][98][99], the overall fabrication process becomes longer and more expensive. This issue will need to be addressed in the future so as to allow further development of CNT photodetectors.…”

Section: Conclusion Challenges and Future Perspectivesmentioning

confidence: 99%

Advances on Sensors Based on Carbon Nanotubes

2018

View full text Add to dashboard Cite

Carbon nanotubes have been attracting considerable interest among material scientists, physicists, chemists, and engineers for almost 30 years. Owing to their high aspect ratio, coupled with remarkable mechanical, electronic, and thermal properties, carbon nanotubes have found application in diverse fields. In this review, we will cover the work on carbon nanotubes used for sensing applications. In particular, we will see examples where carbon nanotubes act as main players in devices sensing biomolecules, gas, light or pressure changes. Furthermore, we will discuss how to improve the performance of carbon nanotube-based sensors after proper modification.

show abstract

Scalable Preparation of High-Density Semiconducting Carbon Nanotube Arrays for High-Performance Field-Effect Transistors

Cited by 62 publications

References 45 publications

Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Substrate‐Wide Confined Shear Alignment of Carbon Nanotubes for Thin Film Transistors

Chirality‐Enriched Carbon Nanotubes for Next‐Generation Computing

Advances on Sensors Based on Carbon Nanotubes

Contact Info

Product

Resources

About