Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications

Ghandi, Reza; Hitchcock, Collin; Kennerly, Stacey; Torky, Mohamed; Chow, T. Paul

doi:10.1109/iedm45625.2022.10019368

Cited by 7 publications

(2 citation statements)

References 11 publications

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“…SJ has achieved a success in Si [3] and was recently reported in SiC [4]- [6]. It promises a superior limit in GaN.…”

Section: Introductionmentioning

confidence: 99%

“…4 Fig. 5 compares the differential R ON,SP versus BV trade-off of the vertical GaN SJ diode with the state-of-the-art vertical GaN 1D diodes [21]- [30] and SiC SJ devices [4]- [6], as well as the 1D SiC/GaN limits and the GaN SJ limit [𝑅𝑅 𝑜𝑜𝑜𝑜,𝑠𝑠𝑠𝑠 = 4𝑤𝑤 𝑜𝑜 𝐵𝐵𝐵𝐵/ (𝜀𝜀𝜇𝜇 𝑜𝑜 𝐸𝐸 𝐶𝐶…”

Section: Introductionmentioning

confidence: 99%

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1 kV Self-Aligned Vertical GaN Superjunction Diode

Ma,

Porter,

Qin

et al. 2024

IEEE Electron Device Lett.

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This work demonstrates vertical GaN superjunction (SJ) diodes fabricated via a novel self-aligned process. The SJ comprises n-GaN pillars wrapped by the charge-balanced p-type nickel oxide (NiO). After the NiO sputtering around GaN pillars, the self-aligned process exposes the top pillar surfaces without the need for additional lithography or a patterned NiO etching which is usually difficult. The GaN SJ diode shows a breakdown voltage (BV) of 1100 V, a specific on-resistance (RON) of 0.4 mΩ·cm 2 , and a SJ drift-region resistance (Rdr) of 0.13 mΩ·cm 2 . The device also exhibits good thermal stability with BV retained over 1 kV and RON dropped to 0.3 mΩ·cm 2 at 125 o C. The trade-off between BV and Rdr is superior to the 1D GaN limit. These results show the promise of vertical GaN SJ power devices. The self-aligned process is applicable for fabricating the heterogeneous SJ based on various wide-and ultra-wide bandgap semiconductors. 1

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“…SJ has achieved a success in Si [3] and was recently reported in SiC [4]- [6]. It promises a superior limit in GaN.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

1 kV Self-Aligned Vertical GaN Superjunction Diode

Ma,

Porter,

Qin

et al. 2024

IEEE Electron Device Lett.

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Recent developments in superjunction power devices

Ma,

Chen,

Liu

et al. 2024

J. Semicond.

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Superjunction (SJ) is one of the most innovative concepts in the field of power semiconductor devices and is often referred to as a "milestone" in power MOS. Its balanced charge field modulation mechanism breaks through the strong dependency between the doping concentration in the drift region and the breakdown voltage V B in conventional devices. This results in a reduction of the trade-off relationship between specific on-resistance R on,sp and V B from the conventional R on,sp∝V B 2.5 to R on,sp∝W∙V B 1.32, and even to R on,sp∝W·V B 1.03. As the exponential term coefficient decreases, R on,sp decreases with the cell width W, exhibiting a development pattern reminiscent of "Moore’s Law". This paper provides an overview of the latest research developments in SJ power semiconductor devices. Firstly, it introduces the minimum specific on-resistance R on,min theory of SJ devices, along with its combination with special effects like 3-D depletion and tunneling, discussing the development of R on,min theory in the wide bandgap SJ field. Subsequently, it discusses the latest advancements in silicon-based and wide bandgap SJ power devices. Finally, it introduces the homogenization field (HOF) and high-K voltage-sustaining layers derived from the concept of SJ charge balance. SJ has made significant progress in device performance, reliability, and integration, and in the future, it will continue to evolve through deeper integration with different materials, processes, and packaging technologies, enhancing the overall performance of semiconductor power devices.

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Research of over-2kV, 2.35GW/cm² β-Ga₂O₃ Vertical Superjunction Schottky Barrier Diodes

Li,

Yuan,

Peng

et al. 2024

2024 IEEE 2nd International Conference on Power Science and Technology (ICPST)

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Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications

Cited by 7 publications

References 11 publications

1 kV Self-Aligned Vertical GaN Superjunction Diode

1 kV Self-Aligned Vertical GaN Superjunction Diode

Recent developments in superjunction power devices

Research of over-2kV, 2.35GW/cm² β-Ga₂O₃ Vertical Superjunction Schottky Barrier Diodes

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Scalable Ultrahigh Voltage SiC Superjunction Device Technologies for Power Electronics Applications

Cited by 7 publications

References 11 publications

1 kV Self-Aligned Vertical GaN Superjunction Diode

1 kV Self-Aligned Vertical GaN Superjunction Diode

Recent developments in superjunction power devices

Research of over-2kV, 2.35GW/cm2 β-Ga2O3 Vertical Superjunction Schottky Barrier Diodes

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Research of over-2kV, 2.35GW/cm² β-Ga₂O₃ Vertical Superjunction Schottky Barrier Diodes