Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (RON xQGG) of 3.1 mohm-nC at 40V and fT/fMAX of 130/680GHz

Then, Han Wui; Radosavljević, M.; Koirala, Pratik; Beumer, M.; Bader, Samuel James; Zubair, Ahmad; Hoff, T.; Jordan, R.; Michaelos, T.; Peck, J.; Ban, I.; Nair, N.; Vora, H.; Joshi, K.; Meric, Inanc; Oni, A.; Desai, Nachiket; Krishnamurthy, Harish K.; Ravichandran, K.; Yu, Jian; Beach, S.; Frolov, Dimitri; Hubert, A.; Latorre-Rey, Alvaro D.; Rami, Said; Rangaswamy, Jag; Yu, Qiang; Fischer, P.

doi:10.1109/iedm45625.2022.10019373

Cited by 10 publications

(2 citation statements)

References 6 publications

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“…AlGaN/GaN HEMTs can be grown on SiC, sapphire, and Si substrates. Of these, growing GaN on Si has the benefit of fabricating devices on a large wafer (up to 300 mm) [5] with silicon-compatible processes to reduce manufacturing costs. Although growing high quality GaN on Si on large area with good uniformity is very challenging due to large differences in lattice parameters and the thermal expansion coefficient (CTE), many recent reports show that AlGaN/GaN HEMTs structures can be grown on Si with very competitive power performances [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

et al. 2023

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A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

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Section: Introductionmentioning

confidence: 99%

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

et al. 2023

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“…GaN-based materials and their alloys have emerged as the promising candidates for high-frequency and high-power device applications due to their wide bandgap, high mobility, and robust thermal stability, making them the ideal materials for operating under harsh conditions. In recent years, AlGaN/GaN HEMT on Si for high power and high RF applications have been studied by many groups, [1][2][3][4][5][6] since GaN-on-Si substrate technology offers a large area (up to 12 inches) with silicon-compatible processes and costeffective advantages, 7,8 as opposed to the implementation of other substrates such as SiC.…”

mentioning

confidence: 99%

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

Weng

Chung

et al. 2023

ECS J. Solid State Sci. Technol.

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A quaternary In0.04Al0.63Ga0.33N/GaN metal-insulator-semiconductor (MIS)-high electron mobility transistor (HEMT) on Si substrate using a GaN:C back-barrier (BB) layer and an AlGaN/AlN superlattice (SL) buffer layer to achieve a high breakdown voltage and a high output current density was demonstrated. Compared to the conventional device adopting AlGaN as the barrier layer, the proposed device showed a better 2DEG carrier density up to 1.9 x1013 cm-3, a higher output current density up to 1,070 mA/mm (improved by 47%), an on-resistance (Ron) as low as 7.64 Ω-mm (decreased by 26%), an off-state breakdown voltage up to 2,070 V, and an improved dynamic Ron performance (dynamic to static ratio increased to just 1.2 times at an applied drain-to-source stress voltage (VDS, stress) of 400 V). These results indicated the great potential of the InAlGaN/GaN MIS-HEMTs on Si for high-power switching applications.

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Challenges and Future Trends

Le Fèvre,

Haynes,

Leong

et al. 2024

GaN Technology

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Scaled Submicron Field-Plated Enhancement Mode High-K Gallium Nitride Transistors on 300mm Si(111) Wafer with Power FoM (R_ON xQ_GG) of 3.1 mohm-nC at 40V and f_T/f_MAX of 130/680GHz

Cited by 10 publications

References 6 publications

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

High Current Density and Low Ron Quaternary InAlGaN MIS-HEMT on Si for Power Applications

Challenges and Future Trends

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