Scaling and Microstructure Effects on Electromigration Reliability for Cu Interconnects

Hu, Chao; Hübner, René; Zhang, Lijuan; Hauschildt, M.; Ho, Paul S.

doi:10.1002/9781119963677.ch9

Cited by 1 publication

(1 citation statement)

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“…New materials and techniques are available to improve the reliability of copper lines [29,30,31], but these are likely to involve resistance increases, degraded performance (RC), and increased likelihood of wire self-heating effects. The local heating of wires caused by I 2 R Joule heating is likely to become a more significant problem for high-speed designs, due to the non-scaling increases in line resistance described above, and exacerbated by any lower dielectric constant (and likely lower thermal conductivity) materials introduced.…”

Section: Figure 6 Wire Lifetime and Current Density Scalingmentioning

confidence: 99%

Circuit design challenges at the 14nm technology node

Warnock¹

2011

Proceedings of the 48th Design Automation Conference

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Technology scaling non-idealities, already apparent in the transitions between previous technology generations, will become even more pronounced as the world moves from the 22nm node to the 14nm node. Digital logic designers working on highperformance microprocessors and similar projects will face significant new challenges as the basic FET structure is changed in a fundamental way, in order to squeeze more performance from scaled devices. New design constraints and new sources of variability will have to be understood, and new methodologies will be required to enable robust, high-speed designs. In addition, the metal interconnects between devices will also be stressed. Scaled wire RC will likely increase, and new tools and methods will be needed to ensure reliable designs.

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Section: Figure 6 Wire Lifetime and Current Density Scalingmentioning

confidence: 99%

Circuit design challenges at the 14nm technology node

Warnock¹

2011

Proceedings of the 48th Design Automation Conference

View full text Add to dashboard Cite

show abstract

Scaling and Microstructure Effects on Electromigration Reliability for Cu Interconnects

Cited by 1 publication

References 86 publications

Circuit design challenges at the 14nm technology node

Circuit design challenges at the 14nm technology node

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