Scaling and optimization of high-density integrated Si-capacitors

Weinreich, Wenke; Seidel, Konrad; Rudolph, Matthias; Koch, Johannes; Paul, J.; Riedel, S.; Sundqvist, Jonas; Steidel, Katja; Gutsch, Manuela; Beyer, V.; Hohle, Christoph

doi:10.1109/iscdg.2013.6656306

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…As the top electrode, 35 nm of TiN were fabricated at 673 K by chemical vapor deposition (CVD). In Figure 2 b, the slightly dark patches within ZrO 2 with crystalline lattices indicate areas, partially crystallized into the tetragonal phase [ 16 ]. Based on Figure 2 b, Al 2 O 3 seemed to have helped not only during the deposition of the high-k stack at T D = 556–576 K ( Table 1 ) to avoid unwanted premature crystallization, but also during the remaining fabrication/integration process at temperatures up to 100 K higher than T D to not fully crystalize the fabricated insulator.…”

Section: Methodsmentioning

confidence: 99%

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

et al. 2022

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Embedded three-dimensional (3-D) metal-insulator-metal (MIM) decoupling capacitors with high-κ dielectric films of high capacitance and long-life time are increasingly needed on integrated chips. Towards achieving better electrical performance, there is a need for investigation into the influence of the variation in atomic layer deposition (ALD) parameters used for thin high-κ dielectric films (10 nm) made of Al2O3-doped ZrO2. This variation should always be related to the structural uniformity, the electrical characteristics, and the electrical reliability of the capacitors. This paper discusses the influence of different Zr precursor pulse times per ALD cycle and deposition temperatures (283 °C/556 K and 303 °C/576 K) with respect to the capacitance density (C-V), voltage linearity and leakage current density (I-V). Moreover, the dielectric breakdown and TDDB characteristics are evaluated under a wide range of temperatures (223–423 K).

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Section: Methodsmentioning

confidence: 99%

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

et al. 2022

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“…The dielectric capacitors possess the highest power density as compared with other capacitors, such as polymer capacitors, electrochemical capacitor, and etc. [6][7][8][9][10] However, their energy storage capability lags behind due to the lower energy density. The total size and weight of pulsed power system would be reduced significantly if equipping the capacitors with larger energy density.…”

mentioning

confidence: 99%

3D Interdigital Electrodes Dielectric Capacitor Array for Energy Storage Based on Through Glass Vias

Fang

Gao

Chen

et al. 2022

Adv Materials Technologies

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It is urgent to develop small-scale high power pulse systems with high performance, with the further necessity of high-power pulse system in the military and civilian field, such as ERA (Electric Reactive Armor) and AED (Automated External Defibrillator).Dielectric capacitor, combining stable energy storage with high power, is the core device that has been widely applied in pulsed power system. The dielectric capacitors possess the highest power density as compared with other capacitors, such as polymer capacitors, electrochemical capacitor, and etc. [6][7][8][9][10] However, their energy storage capability lags behind due to the lower energy density. The total size and weight of pulsed power system would be reduced significantly if equipping the capacitors with larger energy density. The limited number of charges on the surface of electrodes results in the low energy density of dielectric capacitors. [2][3][4] Many efforts have been done for increasing the specific surface area of the electrodes. Recently, the nanostructured capacitors with large specific surface areas are applied to achieve major advances in energy density of dielectric capacitors. [10,11] The nanostructured designs of dielectric capacitors can be achieved by two methods: a self-assembly technique for the ultracompact capacitors, [3,4,[12][13][14][15][16][17][18][19][20] and metal-insulator-metal (MIM) capacitors in porous templates [2,3,[11][12][13][14][15][16][17][18][19][20][21] (a 3D nanopore template of anodic aluminum oxide (AAO) with multilayer film deposition into the nanopores, and a nanopillars silicon template with multilayer film deposition). These methods for increasing the specific surface area of the electrodes are demonstrated to effectively improve the energy density of capacitors. The ultrahigh capacitance density of dielectric capacitor was reported to 100 uF cm −2 , which is 105 larger than that of planer dielectric capacitors. [3,4,[18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33] However, these nanostructured dielectric capacitors just use MIM thin films in 3D nanopore template, which cannot undertake such large voltage in pulse power systems.Dielectric material capacitor is the best choose for ultrahigh pulse power energy storage. The development of dielectric capacitors with both ultrahigh-power density and energy storage density is urgent. 3D dielectric capacitors exceed the conventional planar dielectric capacitors in terms of structure and performance, break through the energy storage limit of

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Scaling and optimization of high-density integrated Si-capacitors

Cited by 2 publications

References 6 publications

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

Three-Dimensional Metal-Insulator-Metal Decoupling Capacitors with Optimized ZrO2 ALD Properties for Improved Electrical and Reliability Parameters

3D Interdigital Electrodes Dielectric Capacitor Array for Energy Storage Based on Through Glass Vias

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