Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

Srivastava, Viranjay M.

doi:10.21817/ijet/2017/v9i1/170902322

Cited by 10 publications

(3 citation statements)

References 28 publications

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“…The double-gate MOSFET with InN/La2O3 makes the entire circuit board enough to withstand all the Short Channel effects (SCEs) and hence improves the Drain Induced Barrier Lowering (DIBL) effect. The small difference in the drain current in the proposed design when compared to conventional MOSFET is due to the finite mesh of the drift-diffusion model in the simulator [7,19]. Fig.…”

Section: Analysis Of Proposed Model and Its Discussionmentioning

confidence: 99%

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Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Gowthaman

Srivastava

2022

MSF

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The channel material of a gate describes the operating condition of the MOSFET. A suitable operating condition prevails in MOSFETs if the transistors are quite enough to observe and control at the nanometer regime. An efficient gate and channel material have been proposed in this work which is based on the electrical properties they exhibit at the temperature of 300K. The doping concentration for the electrons and holes is maintained to be 1Χ1019cm-3 for the entire electronic simulator. The simulation results show that using La2O3 along with Indium Nitride (InN) material for the designing of Double-Gate (DG) MOSFETs provides better controllability over the transistor at a channel length of 50nm. This proposed DG-MOSFET is more compliant than the conventional coplanar MOSFETs based on Silicon.

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Section: Analysis Of Proposed Model and Its Discussionmentioning

confidence: 99%

“…The InN material has a very low bandgap of approximately 0.7 eV under ultraviolet and infrared regions. The InN is a Wurtzite hexagonal crystal of electron mobility of fewer than 3200 cm 2 V -1 s -1 and electron diffusion coefficient of 80 cm 2 s -1 [6,7].…”

Section: Introductionmentioning

confidence: 99%

Analysis of InN/La2O3 Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Gowthaman

Srivastava

2022

MSF

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“…The InGaAs MOSFET designs are widely analyzed and investigations were carried out for low power and high-speed applications [3][4][5][6]. The re-grown method for constructing the source and drain terminals paves way for low power due to small ohmic contact long the area of the terminals [7][8][9][10] with greater doping in the material bulk and the larger distance between source and drain contact terminals. The larger parasitic capacitance in the source and drain terminal attenuates the frequency performance of the MOSFET device, due to the presence of high-ƙ dielectric material between the gate terminal and the re-grown source & drain contact terminals.…”

Section: Introductionmentioning

confidence: 99%

Design of Hafnium Oxide (HfO2) Sidewall in InGaAs/InP for High-Speed Electronic Devices

Gowthaman

Srivastava

2022

KEM

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The Indium Gallium Arsenide (InGaAs) based MOSFETs have been widely used in the research of high-speed devices with higher frequency. It has some application in the designing areas of power amplifiers. The InGaAs mainly have greater electron mobility and the lesser band gap in their compound makes them more suitable for developing high-speed devices. The Indium Gallium Arsenide compound-based MOSFETs are designed using the source/drain grown on a passive layer of Indium Phosphide substrate. This helps in reducing the power budget of the MOSFET and thereby reduces source and drain resistance. The re-grown layers over the bulk have serious issues such as parasitic capacitance and greater electrical field at the terminals of the gate along with the drain terminal. This results in a larger leakage current along with the terminals and thereby induces the degradation of the frequency of the application amplifiers. The high-ƙ dielectric along the gate terminal makes the device immune to leakage current for lesser frequency applications. The optimum material for the dielectric may be Hafnium (IV) Oxide – HfO2 which has been used as a sidewall in the proposed InGaAs MOSFET design. The device simulation was carried out in a way to evaluate the characteristics of the proposed designs. The results were submissive to the conventional MOSFETs in terms of output capacitance over the source and drain terminals, leakage current in the drain terminal, and improved frequency parameters. The results also suggested that the sidewall design over the gate terminal constitutes the frequency improvement without losing the power and current characteristics.

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Design of Concentric Cylindrical Surrounding Double-Gate (CSDG) MOSFETs – A Fabrication Perspective in Nanoscale Regime

Gowthaman

Srivastava²

2022

Silicon

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Scaling Effect on Parameters of HfO2 Based CSDG MOSFET

Cited by 10 publications

References 28 publications

Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Analysis of <i>InN/La<sub>2</sub>O<sub>3</sub></i> Twosome for Double-Gate MOSFETs for Radio Frequency Applications

Design of Hafnium Oxide (HfO<sub>2</sub>) Sidewall in InGaAs/InP for High-Speed Electronic Devices

Design of Concentric Cylindrical Surrounding Double-Gate (CSDG) MOSFETs – A Fabrication Perspective in Nanoscale Regime

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