Scaling of anomalous Hall effect in amorphous CoFeB films with accompanying quantum correction

Abstract

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Current-driven magnetization switching in ferromagnetic bulk Rashba semiconductor (Ge,Mn)Te

“…2C ). The value tanθ H = 2 × 10 −3 to 3 × 10 −3 is a typical or slightly smaller value compared with other magnets such as elemental transition ferromagnets ( 25 ), permalloy ( 35 ), CoFeB ( 36 ), diluted magnetic semiconductor ( 37 ), and noncollinear antiferromagnet ( 38 ). The temperature dependence of σ AHE S for various samples ( Fig.…”

Longitudinal and anomalous Hall conductivity of a general two-band model

“…Whereas there is a proper scaling of the anomalous Hall conductivity of ν = 0 and 2 in the clean and dirty limit, respectively, we identified a crossover regime without a proper scaling behavior for intermediate conductivities σ xx = 10-30 000 ( cm) −1 , in which various ferromagnets were found. The treatment of intrinsic and extrinsic contributions on equal footing as well as the experimental and theoretical investigation of the scaling including, for instance, vertex correction, electron localization and quantum corrections from Coulomb interaction is still ongoing research [42,46,48,[84][85][86][87] and beyond the scope of this paper. We discussed spiral spin density waves as an example of a system with broken lattice-translation but combined lattice-translation and spin-rotation symmetry, which is captured by our general model.…”

“…The scaling behavior σ xy ∝ (σ xx ) 1.6 is observed experimentally and discussed theoretically in various publications in the recent years (see Refs. [42,46,48,[83][84][85][86][87] and references therein). Within our theory we clearly identify the intermediate regime, σ xx ≈ 100-5000 ( cm) −1 , as a crossover regime not related to a (proper) scaling behavior.…”

“…Following the seminal work of Onoda et al [42,46], which treated intrinsic and extrinsic contributions on equal footing, the experimental and theoretical investigation of the scaling including, for instance, vertex correction, electron localization and quantum corrections from Coulomb interaction is still ongoing research [48,[84][85][86][87] and is beyond the scope of this paper.…”

Anomalous Hall effect in Co40Fe40B20/SiO2/Si structures

“…2a. In our previous work, the amorphous Co 40 Fe 40 B 20 films with t=40, 160 nm grown on glass substrates show a metallic behavior in the temperature range from 100 to 300 K[24]. The R-T curves of Co 40 Fe 40 B 20 /SiO 2 /Si structures suggest that Si substrate plays an important role on the electrical transport properties.…”