Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

Ganpule, C. S.; Stanishevsky, Andrei; Aggarwal, S.; Melngailis, J.; Williams, Ellen D.; Ramesh, R.; Joshi, V. K.; Araujo, Carlos Paz de

doi:10.1063/1.125485

Cited by 105 publications

(53 citation statements)

References 19 publications

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“…8 In many cases, the morphological information on domain structure and orientation obtained from SPM images is sufficient, and numerous observations of local domain dynamics as related to polarization switching processes, [9][10][11] ferroelectric fatigue, [12][13][14][15] phase transitions, 16 -19 mechanical stresses, 20 etc., have been made. However, analysis of local ferroelectric properties including hysteresis measurements, 21 stress effects in thin films, 22 size dependence of ferroelectric properties, 23,24 etc., requires quantitative interpretation of the SPM interaction. A detailed analysis of EFM and SSPM imaging on ferroelectric surfaces is given by Kalinin and Bonnell.…”

Section: Introductionmentioning

confidence: 99%

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

2002

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In order to determine the origin of image contrast in piezoresponse force microscopy (PFM), analytical descriptions of the complex interactions between a small tip and ferroelectric surface are derived for several sets of limiting conditions. Image charge calculations are used to determine potential and field distributions at the tip-surface junction between a spherical tip and an anisotropic dielectric half plane. Methods of Hertzian mechanics are used to calculate the response amplitude in the electrostatic regime. In the electromechanical regime, the limits of strong (classical) and weak (field-induced) indentation are established and the relative contributions of electroelastic constants are determined. These results are used to construct ''piezoresponse contrast mechanism maps'' that correlate the imaging conditions with the PFM contrast mechanisms. Conditions for quantitative PFM imaging are set forth. Variable-temperature PFM imaging of domain structures in BaTiO 3 and the temperature dependence of the piezoresponse are compared with GinzburgDevonshire theory. An approach to the simultaneous acquisition of piezoresponse and surface potential images is proposed. In order to determine the origin of image contrast in piezoresponse force microscopy ͑PFM͒, analytical descriptions of the complex interactions between a small tip and ferroelectric surface are derived for several sets of limiting conditions. Image charge calculations are used to determine potential and field distributions at the tip-surface junction between a spherical tip and an anisotropic dielectric half plane. Methods of Hertzian mechanics are used to calculate the response amplitude in the electrostatic regime. In the electromechanical regime, the limits of strong ͑classical͒ and weak ͑field-induced͒ indentation are established and the relative contributions of electroelastic constants are determined. These results are used to construct ''piezoresponse contrast mechanism maps'' that correlate the imaging conditions with the PFM contrast mechanisms. Conditions for quantitative PFM imaging are set forth. Variable-temperature PFM imaging of domain structures in BaTiO 3 and the temperature dependence of the piezoresponse are compared with Ginzburg-Devonshire theory. An approach to the simultaneous acquisition of piezoresponse and surface potential images is proposed.

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Section: Introductionmentioning

confidence: 99%

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

2002

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“…To the authors knowledge, ferroelectric features between 70 and 100 nm with a clear piezoelectric activity have only been achieved by focused ion beam (FIB) patterning (39).…”

Section: Nano-sized Ferroelectric Structuresmentioning

confidence: 99%

Ferroeléctricos sobre silicio preparados por métodos de depósito químico de disoluciones: de la lámina delgada a los sistemas auto-ensamblados

Calzada¹,

Ricote²,

Jiménez³

et al. 2006

Bol. Soc. Esp. Ceram. Vidr.

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The work of the authors during the last years on ferroelectric thin and ultra-thin films deposited by Chemical Solution Deposition (CSD) onto silicon based substrates is reviewed in this paper. Ferroelectric layers integrated with silicon substrates have potential use in the new micro/nanoelectronic devices. Two hot issues are here considered: 1) the use of low processing temperatures of the ferroelectric film, with the objective of not producing any damage on the different elements of the device heterostructure, and 2) the downscaling of the ferroelectric material with the aim of achieving the high densities of integration required in the next generation of nanoelectronic devices. The UV-assisted Rapid Thermal Processing has successfully been used in our laboratory for the fabrication of ferroelectric films at low temperatures. Preliminary results on the CSD preparation of nanosized ferroelectric structures are shown. Keywords:Chemical Solution Deposition (CSD), ferroelectricity, thin film, ultrathin film, nano-sized structures.Ferroeléctricos sobre silicio preparados por métodos de depósito químico de disoluciones: de la lámina delgada a los sistemas auto-ensamblados.Este artículo revisa el trabajo realizado por los autores durante los últimos años sobre lámina delgada y ultra-delgada ferroeléctrica preparada mediante el depósito químico de disoluciones (CSD) sobre substratos de silicio. Las películas ferroeléctricas integradas con silicio tienen potenciales usos en los nuevos dispositivos micro/nanoelectrónicos. Dos aspectos claves son aquí considerados: 1) el uso de bajas temperaturas de procesado de la lámina ferroeléctrica, con el fin de no dañar los diferentes elementos que forman la heteroestructura del dispositivo y 2) la disminución de tamaño del material ferroeléctrico con el fin de conseguir las altas densidades de integración requeridas en la próxima generación de dispositivos nanoelectróncos. Los procesos térmicos rápidos asistidos con irradiación UV se están usando en nuestro laboratorio para conseguir la fabricación del material ferroeléctrico a temperaturas bajas compatibles con la tecnología del silicio. Se muestran resultados preliminares sobre estructuras ferroeléctricas nanométricas preparadas por CSD.Palabras clave: Depósito químico de disoluciones (CSD), ferroelectricidad, lámina delgada, lámina ultra-delgada, estructuras nanométricas.

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“…The smallest freestanding capacitor structures achieved so far were in the range of 100 nm lateral cell size. 8,9 As the switching charge to detect drops below the background noise for ever shrinking structure dimensions, the smallest capacitors ever electrically characterized were 200ϫ 200 nm 2 . 10,11 In order to enable electrical characterization on nanoscale ferroelectric capacitors and to set a step toward further integration, our group recently presented self-assembled lead titanate ͓PbTiO 3 ͑PTO͔͒ nanograins embedded in a layer of low-k dielectric spin-on glass ͑SOG͒ and equipped with collective gold top electrodes.…”

Section: Introductionmentioning

confidence: 99%

Direct electrical characterization of embedded ferroelectric lead titanate nanoislands

Clemens

Dippel

Schneller

et al. 2008

Journal of Applied Physics

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We report on the fabrication and characterization of lead titanate nanoislands on platinized silicon substrates embedded into a low-k dielectric. Our findings with Pt and Au as collective top electrodes are compared to previous results and thin films, and we discuss the coercive field and the remanent polarization with special care devoted to capacitive and leakage contributions of the nonpolar matrix. A direct electrical characterization of sub-100-nm ferroelectric nanoislands becomes feasible if they are measured in parallel, providing that the thin film material parameters of both ferroelectric and spin-on glass are independently determined.

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Scaling of ferroelectric and piezoelectric properties in Pt/SrBi2Ta2O9/Pt thin films

Cited by 105 publications

References 19 publications

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces

Ferroeléctricos sobre silicio preparados por métodos de depósito químico de disoluciones: de la lámina delgada a los sistemas auto-ensamblados

Direct electrical characterization of embedded ferroelectric lead titanate nanoislands

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