2011
DOI: 10.1021/nn202239y
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Scaling of High-Field Transport and Localized Heating in Graphene Transistors

Abstract: We use infrared thermal imaging and electrothermal simulations to find that localized Joule heating in graphene field-effect transistors on SiO(2) is primarily governed by device electrostatics. Hot spots become more localized (i.e., sharper) as the underlying oxide thickness is reduced, such that the average and peak device temperatures scale differently, with significant long-term reliability implications. The average temperature is proportional to oxide thickness, but the peak temperature is minimized at an… Show more

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Cited by 81 publications
(110 citation statements)
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“…Thus, high thermal conductivity could superficially suggest very good heat sinking and low temperature rise during device operation. However, under high-field and high-temperature (i.e., typical circuit) operating conditions, significant dissipation and temperature rise can nevertheless occur in graphene devices, 38,81 as shown in Figure 5.…”
Section: Devices and Interconnectsmentioning
confidence: 99%
“…Thus, high thermal conductivity could superficially suggest very good heat sinking and low temperature rise during device operation. However, under high-field and high-temperature (i.e., typical circuit) operating conditions, significant dissipation and temperature rise can nevertheless occur in graphene devices, 38,81 as shown in Figure 5.…”
Section: Devices and Interconnectsmentioning
confidence: 99%
“…[9][10][11][12][13] Nevertheless, several of graphene's remarkable properties do make it attractive for the realization of an infrared incandescent source. For example, it is able to sustain extremely large current densities: 10 7 A/cm 2 in micron sized wires fabricated from graphene grown by chemical vapor deposition (CVD), 8 compared to values of $100 A/cm 2 in a conventional tungsten filament light bulb.…”
mentioning
confidence: 99%
“…Although this makes it attractive for potential use as an incandescent source, 3 thermal emission from graphene has primarily been used over the last few years as a means of probing the electronic structure of graphene transistor devices under bias. [4][5][6][7] However, there is a continuing need for the development of new infrared sources to enable low cost, intrinsically safe, portable infrared gas sensors for applications such as mine safety. Most existing infrared (IR) sensors use conventional incandescent sources which have several shortcomings including slow response time, limited wavelength range (due to the glass envelope of the source), limited lifetimes due to the fragility of the source, relatively high power consumption, and a requirement for explosion proof housings to prevent the source from igniting flammable gases that may be present.…”
mentioning
confidence: 99%
“…devices, [3][4][5][6][7] and also in large area CVD devices, 8 where the thermal emission is dominated by Joule heating governed by the charge distribution along the channel. In this case given the symmetrical nature and scaling of the emission we estimate the hotspot to be approximately half-way between the source and the drain contacts.…”
mentioning
confidence: 99%
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