Scaling of the critical current in the quantum Hall effect: A probe of current distribution

Balaban, Nathalie Q.; Meirav, U.; Shtrikman, Hadas; Levinson, Y.

doi:10.1103/physrevlett.71.1443

Cited by 79 publications

(49 citation statements)

References 26 publications

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“…The monotonic increase of I b is not obviously linear like the one of I c . Indeed we could fit the results for I b with the law I cr = I 0 Log(W/W 0 ) stated by Balaban et al [31]. As shown in figure 9, the data for PL175 correspond to the curve I = 500Log(W/150) while the data for PL173 are .…”

Section: Resultsmentioning

confidence: 99%

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Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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This paper reports on an experimental study of the contact resistance of Hall bars in the Quantum Hall Effect regime while increasing the current through the sample. These measurements involve also the longitudinal resistance and they have been always performed before the breakdown of the Quantum Hall Effect. Our investigations are restricted to the i = 2 plateau which is used in all metrological measurements of the von Klitzing constant R K . A particular care has been taken concerning the configuration of the measurement. Four configurations were used for each Hall bar by reversing the current and the magnetic field polarities. Several samples with different width have been studied and we observed that the critical current for the contact resistance increases with the width of the Hall bar as previously observed for the critical current of the longitudinal resistance. The critical currents exhibit either a linear or a sublinear increase. All our observations are interpreted in the current understanding of the Quantum hall effect brekdown. Our analysis suggests that a heated region appears at the current contact, develops and then extends in the whole sample while increasing the current. Consequently, we propose to use the contact resistance as an electronic thermometer for the Hall fluid.

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Section: Resultsmentioning

confidence: 99%

“…) to T e = 30 K. In the case of Balaban's samples [31], C. Chaubet et al [42] have shown that this temperature increases exponentially from 10K to 50K at the threshold for longitudinal voltages. So it is clear that the electronic temperature is above 10K in the pre-breakdown regime.…”

Section: B the Contact Resistance As An Electronic Thermometermentioning

confidence: 99%

Behavior of the contacts of quantum Hall effect devices at high currents

Meziani¹,

Chaubet²,

Bonifacie³

et al. 2004

Journal of Applied Physics

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“…Instead, models in which currents flow in the bulk of the 2DES are more applicable. This does not however mean that the current distribution is uniform [120,139].…”

Section: Breakdown Of the Qhementioning

confidence: 96%

Magnetometry of low-dimensional electron and hole systems

Usher¹,

Elliott²

2009

J. Phys.: Condens. Matter

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Abstract. The high magnetic field, low-temperature magnetic properties of lowdimensional electron and hole systems reveal a wealth of fundamental information. Quantum oscillations of the thermodynamic equilibrium magnetization yield the total density of states, a central quantity in understanding the quantum Hall effect in 2D systems. The magnetization arising from non-equilibrium circulating currents reveals details, not accessible with traditional measurements, of the vanishingly small longitudinal resistance in the quantum Hall regime. We review how the technique of magnetometry has been applied to these systems, the most important discoveries that have been made, and their theoretical significance.

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“…5,6 Multiple studies of this type of breakdown have been performed, mostly focused on the integer QHE regime; see the review by Nachtwei for examples of earlier work. 7 The value of the critical current is sample-dependent and has been found to have either a linear [8][9][10][11][12][13][14][15] or sublinear [12][13][14][15][16] dependence on sample width. Breakdown has been observed in the fractional QHE regime, 17,18 but to our knowledge no dependence of the critical current on sample width has been reported.…”

Section: Introductionmentioning

confidence: 99%

Breakdown of the integer and fractional quantum Hall states in a quantum point contact

Dillard

Lin

Kastner

et al. 2013

Physica E: Low-dimensional Systems and Nanostructures

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Abstract:The integer and fractional quantum Hall states are known to break down at high dc bias, exhibiting deviation from the ideal incompressible behavior. We measure breakdown of the ν = 2, 3, 4, 5 integer and the ν = 4/3 and 5/3 fractional states in a quantum point contact (QPC) of lithographic width ~600 nm. Dependence of the critical current on magnetic field, QPC gate voltage, and QPC width are presented. Of particular interest, the critical current of the 4/3 and 5/3 fractional states shows the opposite dependence on QPC width compared to the integer states. This previously unobserved result is not explained by current theories of breakdown.

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Scaling of the critical current in the quantum Hall effect: A probe of current distribution

Cited by 79 publications

References 26 publications

Behavior of the contacts of quantum Hall effect devices at high currents

Behavior of the contacts of quantum Hall effect devices at high currents

Magnetometry of low-dimensional electron and hole systems

Breakdown of the integer and fractional quantum Hall states in a quantum point contact

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