Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs

Katsuno, Motonari; Sawaki, Nobuhiko; Suzuki, Takamasa; Hara, Kunihiko

doi:10.1016/s0038-1101(98)00070-7

Cited by 3 publications

(8 citation statements)

References 12 publications

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“…In the previous articles [6,7], the NMR of heavily δ-doped GaAs in the metallic regime was studied in detail at 4.2 K-13 K, where we found a unified function for the characteristic behaviour, i.e. the magnitude of the NMR as a function of the magnetic field is scaled by two parameters α M and β.…”

Section: Introductionmentioning

confidence: 72%

“…Firstly the magneto-resistance of samples with different doping densities was measured as a function of the gate voltage at 4.2-13 K. A typical magneto-resistance for a sample with N d = 2.7 × 10 12 cm −2 at 4.2 K is shown in figure 1(a) [6]. The NMR is enhanced by increasing the gate bias voltage.…”

Section: Doping Density Dependence Of the Nmrmentioning

confidence: 99%

“…The phenomenon attracts interest as one of the fundamental transport problems in a low-dimensional random medium [3,4]. In heavily Si δ-doped GaAs, which is in the metallic conduction regime, the NMR has been observed at high temperatures (4.2 K-40 K) [5][6][7]. The characteristic behaviour of the NMR as a function of the magnetic field is an initial linear increase followed by a saturation.…”

Section: Introductionmentioning

confidence: 99%

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The temperature dependence and scaling of the negative magneto-resistance in Si atomic-layer-doped GaAs

Katsuno

Sawaki

1999

Semicond. Sci. Technol.

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The magneto-transport of Si atomic-layer-doped GaAs was studied at various temperatures. The negative magneto-resistance (NMR) observed at cryogenic temperatures (4.2-40 K) was decreased by increasing the lattice temperature or the electric field applied parallel to the layer. It is found that, by introducing two factors, the NMR is expressed by a universal function which is determined by the concentration of Si atoms. The behaviour of the two parameters is studied as a function of the Si concentrations, lattice and electron temperature. The results suggest that the NMR is attributed to the reduction of the backscattering in the boundary of the narrow channel which is formed by the random distribution of Si atoms.

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Section: Introductionmentioning

confidence: 72%

Section: Doping Density Dependence Of the Nmrmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The temperature dependence and scaling of the negative magneto-resistance in Si atomic-layer-doped GaAs

Katsuno

Sawaki

1999

Semicond. Sci. Technol.

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“…As was suggested in figure 1, at low magnetic fields, we can see the negative magnetoresistance. This has been attributed to the random distribution of the impurities in the δ-doped layer [21,22]. The properties of the negative component are still to be studied and the details will be discussed in elsewhere.…”

Section: Analyses With Magnetoresistancementioning

confidence: 99%

Magnetotransport study of the intersubband scattering in an Si -doped GaAs

Katsuno¹,

Sawaki²,

Suzuki³

et al. 1998

Semicond. Sci. Technol.

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The magneto-transport of an FET with a channel of an Si δ-doped GaAs layer is studied at 4.2 K to reveal the transport properties in the subband structure. The Shubnikov-de Haas effect is analysed as a function of the gate bias voltage to estimate the variation of the electron density as well as the mobility in each subband. It is found that the carrier density decreases linearly as a function of the gate voltage. The electron mobility in a given subband shows however an anomalous nonlinear decrease, which is attributed to intersubband scattering.

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“…[1][2][3] For example, the energy gap and lattice parameter can be tuned by changing the composition. Because of the exchange interactions between local Mn moments and band electrons, 4 many interesting phenomena have been discovered, such as extremely large Faraday rotation, 5 giant negative magnetoresistance, 6 and the magnetic polaron. 7 Besides, under the external magnetic field, the properties of spin-glass transition, 8 antiferromagnetic ͑AF͒ interaction, and magnon excitation 9 have been observed.…”

Section: Introductionmentioning

confidence: 99%

Dielectric studies of Cd1−x−yZnxMnyTe crystals

Lin

Chen

Shen

et al. 2001

Journal of Applied Physics

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We report on the dielectric properties of Cd 1ϪxϪy Zn x Mn y Te alloys studied by capacitance and dissipation factor measurements at temperature 5 KϽTϽ475 K and frequency 20 HzϽ f Ͻ1 MHz. A Debye-like relaxation of dielectric behavior has been observed, which is found to be a thermally activated process. The activation energies obtained from the capacitance and dissipation factor measurements are in excellent agreement. By means of our measurements, it is believed that the dielectric character of the carrier hopping among structural defects is responsible for the observed Debye relaxation. The relationship between the activation energy and Zn concentration has been established. The results are described by the four-center model, in which the number of Zn atoms appearing in the nearest-neighbor sites of a defect can have four possible configurations.

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Scaling of the negative magneto-resistance in an Si atomic-layer-doped GaAs

Cited by 3 publications

References 12 publications

The temperature dependence and scaling of the negative magneto-resistance in Si atomic-layer-doped GaAs

The temperature dependence and scaling of the negative magneto-resistance in Si atomic-layer-doped GaAs

Magnetotransport study of the intersubband scattering in an Si -doped GaAs

Dielectric studies of Cd1−x−yZnxMnyTe crystals

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