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The magneto-transport of an FET with a channel of an Si δ-doped GaAs layer is studied at 4.2 K to reveal the transport properties in the subband structure. The Shubnikov-de Haas effect is analysed as a function of the gate bias voltage to estimate the variation of the electron density as well as the mobility in each subband. It is found that the carrier density decreases linearly as a function of the gate voltage. The electron mobility in a given subband shows however an anomalous nonlinear decrease, which is attributed to intersubband scattering.