2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519)
DOI: 10.1109/isscc.2004.1332618
|View full text |Cite
|
Sign up to set email alerts
|

A 1/4in 2M pixel CMOS image sensor with 1.75 transistor/pixel

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
16
0

Publication Types

Select...
5
4

Relationship

1
8

Authors

Journals

citations
Cited by 32 publications
(16 citation statements)
references
References 2 publications
0
16
0
Order By: Relevance
“…An answer to this issue can be found in the ''shared pixel" concept: several neighboring pixels share the same output circuitry [9,10]. The basic idea is illustrated in Fig.…”
Section: Cmos Pixel Architecturesmentioning
confidence: 99%
“…An answer to this issue can be found in the ''shared pixel" concept: several neighboring pixels share the same output circuitry [9,10]. The basic idea is illustrated in Fig.…”
Section: Cmos Pixel Architecturesmentioning
confidence: 99%
“…Noise and DR are important parameters in determining the performance of CIS. Various approaches have been proposed to reduce noise and extend DR, based on various approaches such as linear-logarithmic CIS, multiple sampling, overflow integration capacitor and dual sampling [2][3][4][5][6][7][8][9][10][11][12][13][14][15]. These approaches, however, suffer from variously noise, nonlinearity, lower sensitivity, reduced operating speed, and lower resolution.…”
Section: Complementary Metal Oxide Semiconductor(cmos)mentioning
confidence: 99%
“…Individual pixel resetting has been suggested to extend DR by resetting highly illuminated pixels at a certain mid-voltage. However, it requires additional peripheral circuits and efforts for controlling each individual pixel [13][14][15][16][17]. This paper suggests an approach for DR extension using 5-TR and double-photodiode active pixel sensor based on feedback mechanism.…”
Section: Introductionmentioning
confidence: 99%