Scanned chemical enhancement of surface-enhanced Raman scattering using a charge-transfer complex

Abstract

We have fabricated a charge-transfer system using the self-assembly method. We find the nontotally symmetric b(2) modes are selectively enhanced in SERS spectroscopy and represent a laser wavelength-dependent property.

Semiconductor materials in analytical applications of surface‐enhanced Raman scattering

“…In this sensing system (Fig. ), the extent of chemical contribution to SERS can be precisely controlled by the thickness of the colloidal TiO 2 film . This is attributed to the variation in the charge transfer resonance frequency with TiO 2 size, indicating that the band structure plays an important role in the chemical contribution to SERS.…”

Enhanced Raman scattering when scatterer molecules located in TiO2/Ag nanojunctions

“…[21][22][23] Further, we have studied the complex system of metal and semiconductor, such as ZnO/Ag, CuO/Ag and TiO 2 /Ag, and observed the SERS signals when molecular adsorbed on the substrates. 27,28 In this work, TiO 2 /4-Mpy/Ag composite was fabricated to investigate the SERS of molecules interconnecting of TiO 2 and Ag to study the CT effect in such connection. 27,28 In this work, TiO 2 /4-Mpy/Ag composite was fabricated to investigate the SERS of molecules interconnecting of TiO 2 and Ag to study the CT effect in such connection.…”

Plasmonic Nanoprobes for Real‐Time Optical Monitoring of Nitric Oxide inside Living Cells

“…Figure 2 a shows the initial spectra of ABT before and after the exposure to variable concentrations of NO. Notably, the characteristic ring stretching of ABT at 1548 cm À1 and the in-plane C-N-H deformation at 1604 cm À1 disappear, while bands at 1583 and 1529 cm À1 , ascribed to the ring stretching and the in-plane C-O-H deformation of hydroxybenzenethiol [24] (HBT) appear, which is due to the transformation of ABT to HBT (Figure 2 b). This chemical transformation allows the monitoring of NO by correlating the relative intensity of the two ring stretching bands (1548 and 1583 cm À1 from ABT and HBT, respectively) as I 1583 /(I 1583 +I 1548 ).…”