2005
DOI: 10.1063/1.2123384
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Scanning thermal imaging of microelectronic circuits with a fluorescent nanoprobe

Abstract: High temperature imaging using a thermally compensated cantilever resistive probe for scanning thermal microscopy J.

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Cited by 174 publications
(134 citation statements)
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“…1,2 Indeed, current technological demands in areas such as microelectronics, microoptics, photonics, microfluidics, and nanomedicine have reached a point such that the use of conventional thermometry is not able to make measurements when spatial resolution decreases to the submicron scale, as, for example, in intracellular temperature fluctuations [3][4][5][6][7][8][9][10] and temperature mapping of microcircuits [11][12][13][14][15] and microfluids.…”
Section: Introduction: Thermometry At the Micro-and Nanoscalementioning
confidence: 99%
“…1,2 Indeed, current technological demands in areas such as microelectronics, microoptics, photonics, microfluidics, and nanomedicine have reached a point such that the use of conventional thermometry is not able to make measurements when spatial resolution decreases to the submicron scale, as, for example, in intracellular temperature fluctuations [3][4][5][6][7][8][9][10] and temperature mapping of microcircuits [11][12][13][14][15] and microfluids.…”
Section: Introduction: Thermometry At the Micro-and Nanoscalementioning
confidence: 99%
“…These are scanning thermal microscopes (SThM) [5], dispersed or scanned individual nanoprobes [3,6], direct methods like micro-Raman spectroscopy [7] or near-field optical temperature measurements [8]. SThMs have temperature sensitive elements at a scanning tip (e.g.…”
mentioning
confidence: 99%
“…To determine the penetration depth of the thermal energy into the IC substrate, a characteristic depth d k is defined as d k = ͱ D ␣ / ͑ kf͒, which corresponds to the thermal diffusion length. 5 Consequently, T k ͑r , t͒ and ٌ ជ T k ͑r , t͒ are confined within the substrate in a hemisphere of radius ⌬r k , which can be expressed as a multiple of d k , 18 i.e., ⌬r k = md k ͑see Fig. 1͒.…”
Section: ͑4͒mentioning
confidence: 99%
“…In this scenario, optically-based techniques have been widely used to thermally characterize ICs, 4,5 which have been mainly focused on hot spots detection. 6 Most of them access to the die by its top ͑front-side techniques͒ or back-side surfaces.…”
mentioning
confidence: 99%