1998
DOI: 10.1016/s0022-3093(98)00179-3
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Scanning-tunneling-microscope modifications of Cu(Ag)-chalcogenide glasses

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Cited by 11 publications
(9 citation statements)
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“…The network forming character of Ge is apparently unchanged [10,12,13]. The basic framework of this structure is based on the Ge y Se 100Ày glassy network: The SRO is due to Ge(Se 1=2 ) 4 tetrahedrons [10,12]. In the case of the Ag atom, the position of the first-neighbor at 2.62-2.68 A A agrees with Ag-Se distances found in Ag 8 GeSe 6 and Ag 2 Se crystalline compounds [10,12].…”
Section: Introductionmentioning
confidence: 70%
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“…The network forming character of Ge is apparently unchanged [10,12,13]. The basic framework of this structure is based on the Ge y Se 100Ày glassy network: The SRO is due to Ge(Se 1=2 ) 4 tetrahedrons [10,12]. In the case of the Ag atom, the position of the first-neighbor at 2.62-2.68 A A agrees with Ag-Se distances found in Ag 8 GeSe 6 and Ag 2 Se crystalline compounds [10,12].…”
Section: Introductionmentioning
confidence: 70%
“…Therefore, the knowledge of optical, electrical, thermal and structural properties of Ag-chalcogenide amorphous materials is of essential importance. The ternary systems Ag-As-S [1][2][3], Ag-As-Se [1,[3][4][5][6], Ag-Ge-S [3,7,8], Ge-Se-AgI [9] and Ag-Ge-Se [7,[10][11][12][13][14][15][16] were studied.…”
Section: Introductionmentioning
confidence: 99%
“…These results indicate that, at any given temperature the d.c. conductivity increases with increasing Ag content, a matter that can be attributed to its ionic nature. Accordingly [15], the ionic conduction of Ag is larger than its electronic conduction. However, the valance band structures indicates different nature of Ag-Se bonds in Ag-As-Se systems.…”
Section: Resultsmentioning
confidence: 94%
“…where e is the electron charge and A is a dimensionless parameter which concerns the carrier scattering mechanism [15] or assumed to be a measure of the kinetic energy transported by carries [21]. The plus sign holds for the p-type and minus sign holds for n-type semiconductors, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…19 That is, upon application of negative tip voltages of Ϫ3 to Ϫ5 V, ''sombrero'' shaped deformations, consisting of hillocks surrounded by grooves, appear. Such a shape of STM-induced deformations is rare, for which some unknown mechanism may be concealed.…”
Section: Introductionmentioning
confidence: 99%