Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces

Gan, Shupan; Li, L; Nguyen, Trinh Duy; Qi, Haihua; Hicks, Robert F.; Yang, M. J.

doi:10.1016/s0039-6028(97)00608-0

Cited by 39 publications

(26 citation statements)

References 11 publications

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“…[3][4][5][6] A suitable surface preparation (in terms of surface cleanliness, termination, and reconstruction) is crucial for subsequent material and device properties. 7,8 In technologically relevant process ambients, the carrier gas (such as H 2 ) might affect surface reconstruction, 6,9 step formation, 10 and epitaxial growth. 11 However, the presence of a carrier gas limits surface characterization with standard surface science techniques, which typically require UHV conditions.…”

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“…The difference in RAS amplitude might be due to the coexistence of domains with mutually perpendicular orientation 5,31,32 or to a better surface cleanliness of the sample prepared in MOVPE ambient, since many studies report on the inevitable presence of C on UHV-prepared Ge(100) surfaces. 8,33,34 The clean and the monohydride-terminated Ge(100) surfaces exhibit characteristic RAS signals, which we will apply to study the hydrogen surface coverage during preparation in the process gas ambient of a MOVPE reactor. Fig.…”

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confidence: 99%

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Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Barrigón

Brückner

Supplie

et al. 2013

Applied Physics Letters

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Reactive scattering of H2 from Cu(100): Comparison of dynamics calculations based on the specific reaction parameter approach to density functional theory with experiment J. Chem. Phys. 138, 044708 (2013) Effect of transition-metal additives on hydrogen desorption kinetics of MgH2 Appl. Phys. Lett. 102, 033902 (2013) Writing charge into the n-type LaAlO3/SrTiO3 interface: A theoretical study of the H2O kinetics on the top AlO2 surface Appl. Phys. Lett. 101, 251605 (2012) Collective degrees of freedom involved in absorption and desorption of surfactant molecules in spherical nonionic micelles J. Chem. Phys. 137, 164902 (2012) Controlling the doping of single-walled carbon nanotube networks by proton irradiation

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confidence: 99%

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Barrigón

Brückner

Supplie

et al. 2013

Applied Physics Letters

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“…1 To fabricate devices on Ge, it is essential to clean and passivate its surface effectively. Although clean Ge surfaces can be achieved by wet chemical etching, [2][3][4] the hydrogen and halogen passivation layers formed during etching are not stable in the air. 5,6 Therefore, it is crucial to understand the mechanism of the initial oxidation of the treated Ge surfaces in the air.…”

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confidence: 99%

Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces

Sun

Liu

et al. 2006

Applied Physics Letters

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The initial stage of the oxidation of Cl and Br terminated Ge(111) surfaces is studied using photoelectron spectroscopy. The authors perform controlled experiments to differentiate the effects of different factors in oxidation, and find that water vapor and oxygen play different roles. Water vapor effectively replaces the halogen termination layers with the hydroxyl group, but does not oxidize the surfaces further. In contrast, little oxidation is observed for Cl and Br terminated surfaces with dry oxygen alone. However, with the help of water vapor, oxygen oxidizes the surface by breaking the Ge–Ge back bonds instead of changing the termination layer.

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“…Although Si surface cleaning and passivation have been extensively studied, [1][2][3] only recently has some research been done on Ge surfaces. [4][5][6][7] Conventional XPS results show that HF etching removes Ge oxide and carbon contamination significantly, 4 and HCl etching leads to a chlorine terminated Ge (111) surface, which only forms Ge monochloride. 7 However, it is difficult to probe the details of the chemical nature of treated surfaces and quantify the surface termination and cleanness with conventional XPS, because of its limited surface sensitivity and resolution.…”

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Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions

Sun¹

2005

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Oxide removal from Ge(100) surfaces treated by HCl and HF solutions with different concentrations are systematically studied by synchrotron radiation photoelectron spectroscopy (SR-PES). SR-PES results show that clean surfaces without any oxide can be obtained after wet chemical cleaning followed by vacuum annealing with a residual carbon contamination of less than 0.02 monolayer. HF etching leads to a hydrogen terminated Ge surface whose hydrogen coverage is a function of the HF concentration. In contrast, HCl etching yields a chlorine terminated surface. Possible etching mechanisms are discussed. Surface roughness after HF and HCl treatments is also investigated by AFM, which shows that HF treatment leaves a rougher surface than HCl. a) sysun@stanford.edu corresponding author

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Scanning tunneling microscopy of chemically cleaned germanium (100) surfaces

Cited by 39 publications

References 11 publications

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces

Roles of oxygen and water vapor in the oxidation of halogen terminated Ge(111) surfaces

Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions

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