Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions

Sun, Songlin

doi:10.2172/878080

Cited by 9 publications

(11 citation statements)

References 8 publications

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“…The IL thickness becomes independent of the starting surface, up to 10 min of deposition time. The termination of Cl atom due to the weaker Ge-Cl bond compare to Ge-F bond make Ge back bond less polarized during HCl cleaning, and resistant to further attacking HCl (Sun et al, 2006). Hence, Cl-terminated Ge surface suppresses the Ge diffusion to form GeO x IL.…”

Section: Resultsmentioning

confidence: 99%

Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Sahari

Kashif

Sutan

et al. 2017

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Purpose-The quality of GeOx-Ge interface and the equivalent oxide thickness (EOT) are the main issues in fabricating high-k/Ge gate stack due to the low-k of GeOx interfacial layer (IL). Therefore, a precise study of the formation of GeOx IL and its contribution to EOT is of utmost importance. In this study, the GeOx ILs were formed through post-oxidation annealing of sputtered Al 2 O 3 on the Ge substrate. The purpose of this paper is to report on growth kinetics and composition of IL between Al 2 O 3 and Ge for HCl-and HF-last Ge surface. Design/methodology/approach-After wet chemical cleaning with HCl or HF, Al 2 O 3 was grown onto the Ge surface by RF sputtering. Thickness and composition of IL formed after post-anneal deposition at 400°C in dry oxygen ambience were evaluated as a function of deposition time by FESEM and characterized by X-ray photoelectron spectroscopy, respectively. Findings-It was observed that the composition and thickness of IL were dependent on the starting surface and an aluminum germinate-like composition was formed during RF sputtering for both HF-and HCl-last starting surface. Originality/value-The novelty of this work is to investigate the starting surface of Ge to IL growth between Al 2 O 3 /Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.

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Section: Resultsmentioning

confidence: 99%

Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Sahari

Kashif

Sutan

et al. 2017

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“…SiGe waveguide needs to be performed for less optical loss [15]. Although several Ge surface finishing methods based on wet etching and plasma techniques have been reported [18,19], the emphases have been placed only on applications in electronic devices, and the capacitance vs. voltage (C-V) curves are the main indices in those cases without studies of the changes in the optical properties of the Ge surface. On the other hand, RTA processing would be a faster, more reproducible and more cost-effective solution for a Ge surface treatment.…”

Section: Resultsmentioning

confidence: 99%

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Chen¹,

Huo²,

Cho³

et al. 2014

IEIE Transactions on Smart Processing and Computing

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Abstract:Ge is becoming an increasingly popular semiconductor material with high Si compatibility for on-chip optical interconnect technology. For a better manifestation of the meritorious material properties of Ge, its surface treatment should be performed satisfactorily before the electronic and photonic components are fabricated. Ex-situ rapid thermal annealing (RTA) processes with different gases were carried out to examine the effects of the annealing gases on the thin-film quality of Ge grown epitaxially on Si substrates. The Ge-on-Si samples were prepared in different structures using the same equipment, reduced-pressure chemical vapor deposition (RPCVD), and the samples annealed in N 2 , forming gas (FG), and O 2 were compared with the unannealed (deposited and only cleaned) samples to confirm the improvements in Ge quality. To evaluate the thin-film quality, room-temperature photoluminescence (PL) measurements were performed. Among the compared samples, the O 2 -annealed samples showed the strongest PL signals, regardless of the sample structures, which shows that ex-situ RTA in the O 2 environment would be an effective technique for the surface treatment of Ge in fabricating Ge devices for optical computing systems.

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“…This standard cleaning procedure results in a clean oxygen-free Si surface (Fig. 11b), however, a residual signal from a substoichiometric oxide on germanium [54,55] is still detected (Fig. 11a).…”

Section: Si 1 X-ray Photoemission Spectroscopymentioning

confidence: 99%

Graphene grown on Ge(0 0 1) from atomic source

Lippert

Dąbrowski

Schroeder

et al. 2014

Carbon

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Among the many anticipated applications of graphene, some -such as transistors for Si microelectronics -would greatly benefit from the possibility to deposit graphene directly on a semiconductor grown on a Si wafer. We report that Ge(001) layers on Si(001) wafers can be uniformly covered with graphene at temperatures between 800 • C and the melting temperature of Ge. The graphene is closed, with sheet resistivity strongly decreasing with growth temperature, weakly decreasing with the amount of deposited C, and reaching down to 2 kΩ/2. Activation energy of surface roughness is low (about 0.66 eV) and constant throughout the range of temperatures in which graphene is formed. Density functional theory calculations indicate that the major physical processes affecting the growth are: (1) substitution of Ge in surface dimers by C, (2) interaction between C clusters and Ge monomers, and (3) formation of chemical bonds between graphene edge and Ge(001), and that the processes 1 and 2 are surpassed by CH 2 surface diffusion when the C atoms are delivered from CH 4 . The results of this study indicate that graphene can be produced directly at the active region of the transistor in a process compatible with the Si technology.

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Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions

Cited by 9 publications

References 8 publications

Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Graphene grown on Ge(0 0 1) from atomic source

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Surface Termination and Roughness of Ge(100) Cleaned by HF and HCl Solutions

Cited by 9 publications

References 8 publications

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3layer on germanium

Surface Treatment of Ge Grown Epitaxially on Si by Ex-Situ Annealing for Optical Computing by Ge Technology

Graphene grown on Ge(0 0 1) from atomic source

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Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium

Growth kinetic and composition of the interfacial layer for RF sputtering Al₂O₃layer on germanium