Scanning tunneling spectroscopy examination of surface electronic structures of surface

Lin, Xiuzhu; Chizhov, Ilya; Mai, H.; Willis, R. F.

doi:10.1016/s0169-4332(96)00148-1

Cited by 13 publications

(7 citation statements)

References 21 publications

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“…Subsequent STM studies [3][4][5][6] have also failed to resolve the structure of the underlayer. The electronic structure of the 2 ͱ 3 surface has been investigated with scanning tunneling spectroscopy ͑STS͒, 4,6 angle-resolved photoelectron spectroscopy ͑ARPES͒, 6,7 and k-resolved inverse photoelectron spectroscopy ͑KRIPES͒ ͑Ref. 7͒ resulting in the identification of several filled and empty states near the Fermi level ͑E F ͒.…”

Section: Introductionmentioning

confidence: 99%

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

et al. 2010

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The Si͑111͒ surface with an average coverage of slightly more than one monolayer of Sn, exhibits a 2 ͱ 3 ϫ 2 ͱ 3 reconstruction below 463 K. In the literature, atomic structure models with 13 or 14 Sn atoms in the unit cell have been proposed based on scanning tunneling microscopy ͑STM͒ results, even though only four Sn atoms could be resolved in the unit cell. This paper deals with two issues regarding this surface. First, high-resolution angle-resolved photoelectron spectroscopy ͑ARPES͒ and STM are used to test theoretically derived results from an atomic structure model comprised of 14 Sn atoms, ten in an underlayer and four in a top layer ͓C. Törnevik, M. Hammar, N. G. Nilsson, and S. A. Flodström, Phys. Rev. B 44, 13144 ͑1991͔͒. Low-temperature ARPES reveals six occupied surface states. The calculated surface band structure only reproduces some of these surface states. However, simulated STM images show that certain properties of the four atoms that are visible in STM are reproduced by the model. The electronic structure of the Sn atoms in the underlayer of the model does not correspond to any features seen in the ARPES results. STM images are presented which indicate the presence of a different underlayer consisting of eight Sn atoms, which is not compatible with the model. These results indicate that a revised model is called for. The second issue is the reversible transition from a 2 ͱ 3 ϫ 2 ͱ 3 phase below 463 K to a 1 ϫ 1 phase corresponding to a molten Sn layer, above that temperature. It is found that the surface band structure just below the transition temperature is quite similar to that at 100 K. The surface band structure undergoes a dramatic change at the transition. A strong surface state, showing a 1 ϫ 1 periodicity, can be detected above the transition temperature. This state resembles parts of two surface states which, already before the transition temperature is reached, have begun a transformation and lost much of their 2 ͱ 3 ϫ 2 ͱ 3 periodicities. Calculated surface band structures obtained from 1 ϫ 1 models with one monolayer of Sn are compared with ARPES and STM results. It is found that the strong surface state present above the transition temperature shows a dispersion similar to that of a calculated surface band originating from the Sn-Si interface with the Sn atoms in T 1 sites.

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Section: Introductionmentioning

confidence: 99%

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

et al. 2010

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“…3 In this case, besides the common metallic ͑ ͱ 3 ϫ ͱ 3͒ R30°phase induced by adsorption of 1/3 ML Sn in the fourfold atop ͑T 4 ͒ site, 4,5 a new semiconducting ͑2 ͱ 3 ϫ 2 ͱ 3͒ R30°phase ͑hereafter, it is denoted as 2 ͱ 3 for simplification͒ with the first layer Sn atoms in the T 4 site and the second layer atoms in the H 3 site and total Sn coverage of 1.2 ML was reported. [5][6][7] The epitaxial growth at higher coverage was shown very complicated because of a phase transition from ␣-Sn to ␤-Sn, 8,9 partially due to the large lattice mismatch ͑ϳ19.5%͒ for the ␣-Sn ͑a semiconducting phase with diamond structure, a = 6.489 Å͒, partially due to the symmetry difference for the ␤-Sn ͑a metallic phase with body centered tetragonal structure, a = 5.83 Å and c = 3.18 Å͒ with decreased lattice mismatch of 7.4%. The information on the phase transition was primarily obtained indirectly by electron diffraction 8,9 and coaxial impact collision ion scattering spectroscopy.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
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Surface morphologies and electronic structures of Sn thin films prepared on Si͑111͒-Sn͑2 ͱ 3 ϫ 2 ͱ 3͒ R30°s ubstrate are investigated by low temperature scanning tunneling microscopy/scanning tunneling spectroscopy ͑STS͒. A typical Stranski-Krastanov growth is observed at various growth temperatures ͑95-300 K͒, and the Sn islands above wetting layers exhibit the preferential thicknesses of odd-numbered atomic layers. STS measurement shows the formation of well-defined quantum well states with an oscillation period of 2 ML, which modulates the surface energy and accounts for the observed preferential thicknesses. Due to the interplay between large lattice mismatch and symmetry difference, a transition from ␣-Sn to ␤-Sn occurs at 4 ML, which confirms the previous report. From 4 to 11 ML, the mismatch resulted strain manifests the growth via thickness-dependent striplike modulation structures on the surfaces of all Sn islands. Upon room temperature annealing, the as-deposited Sn islands undergo a metal-insulator transition, while the band gaps of wetting layers increase and oppositely shift with respect to the Fermi level for n-and p-type substrates. The change in electronic property is attributed to the electron transfer at the Sn-Si interface, which also affects the growth and morphologies of films.

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“…This surface is obtained by the evaporation of about one monolayer (1 ML) of Sn on a Si(111) surface. The core-level photoemission and the scanning tunnelling spectroscopy experiments clarified that the surface is semiconducting [11,12]. Although comprehensive studies for proposing the surface structure were performed [11][12][13][14][15][16][17], the atomic structure has not been established yet.…”

Section: Introductionmentioning

confidence: 99%

Highly resolved non-contact atomic force microscopy images of the Sn/Si(111)-() surface

Sugimoto¹,

Abe²,

Hirayama³

et al. 2006

Nanotechnology

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The Sn/Si(111)-([Formula: see text]) surface is observed by using non-contact atomic force microscopy (NC-AFM) at room temperature. The images at relatively far tip-surface distances show four protrusions in each ([Formula: see text]) unit cell, which are similar to previously reported scanning tunnelling microscopy (STM) images. On the other hand, it is found that, at closer tip-surface distances, eight protrusions are clearly resolved, which indicates that the spatial resolution of NC-AFM is higher than that of STM as far as imaging this surface is concerned. Our high-resolution NC-AFM images are in good agreement with a recently proposed model based on 13 Sn atoms per unit cell.

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Scanning tunneling spectroscopy examination of surface electronic structures of surface

Cited by 13 publications

References 21 publications

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite

Highly resolved non-contact atomic force microscopy images of the Sn/Si(111)-() surface

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Scanning tunneling spectroscopy examination of surface electronic structures of surface

Cited by 13 publications

References 21 publications

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Atomic and electronic structures of the ordered23×23and molten1×1phase on the Si(111):Sn surface

Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)RWang1, C.2, Ji3 et al. 2008Phys. Rev. B25280View full textAdd to dashboardCite

Highly resolved non-contact atomic force microscopy images of the Sn/Si(111)-() surface

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Epitaxial growth and quantum well states study of Sn thin films on Sn induced Si(111)-(23×23)R
Wang
¹
,
C.
²
,
Ji
³

et al. 2008
Phys. Rev. B
25
2
8
0
View full text Add to dashboard Cite