Scattering mechanisms in InAs–AlSb quantum wells

Large g-factor enhancement in high-mobility InAs/AlSb quantum wells

“…The periodicity of these oscillations yields an estimate for n s that we find to be about 5% smaller than that inferred from the result of Hall measurements ͑Table I͒, indicating the presence of an additional, low-density, channel for conduction. A similar discrepancy was noted in the recent study by Brosig et al, 11 although these authors did not comment on its origin. The difference between the Hall and SdH measurements increases with increasing 2DEG density, leading us to suggest it may result from weak filling of the second subband in the QW.…”

“…[1][2][3][4][5][6][7][8][9][10][11][12] The large conduction-band offset between InAs and AlSb also results in the formation of a high barrier at the interface between these materials, and so allows for strong confinement of electrons in such QWs. With its much larger g-factor ͑Ϫ15͒ than either Si or GaAs, high-mobility InAs is furthermore of interest in the emerging area of spintronics, where the objective is to develop device structures that exploit the spin degree of freedom of the charge carriers to realize novel functionality.…”

Zero-field spin splitting in InAs-AlSb quantum wells revisited

“…The electron density in InAs quantum wells can also be changed by hydrostatic pressure [16]. We reduced the carrier density in sample No.…”

Properties of two-dimensional electron gas containing self-organized quantum antidots

“…5 The quantum mobility determined from the SdH oscillation amplitudes is four times smaller than the transport mobility and is equal to Q ϭ2.5ϫ10 4 cm 2 /V s. It is known that the ratio of the transport and quantum mobilities, which could be obtained from the SdH oscillation amplitude, reflects a range of the dominant scattering mechanism. 6 The ratio varies from more than ten for high quality 2DEG in GaAs/AlGaAs to one in SiO 2 /Si metal-oxide-semiconductor field effort transistor where the interface is very rough. In our samples we assume, that this is a result of scattering due to short-range potential confinement induced by self-organized islands and that this behavior is similar to that in 2DEGs containing InAs self-assembled dots.…”