Scattering parameter model of low level electrical contacts in electro-mechanical microwave switches-a switch manufacturer approach

Kwiatkowski, R.; Vladimirescu, M.; Zybura, A.; Choi, Sangjo

doi:10.1109/holm.2002.1040845

Cited by 10 publications

(6 citation statements)

References 8 publications

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“…Contact resistance has been shown both experimentally and numerically to remain equal to its dc value at extremely high frequencies (for these switches, higher than 20 THz) [22], [23]. Hence, our experiments were simplified by measuring the dc contact resistance rather than S-parameters.…”

Section: B Experimental Setupmentioning

confidence: 99%

Effect of nanoscale heating on electrical transport in RF MEMS switch contacts

Jensen

Chow

Huang

et al. 2005

J. Microelectromech. Syst.

122

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Abstract-This paper explores contact heating in microelectromechanical systems (MEMS) switches with contact spot sizes less than 100 nm in diameter. Experiments are conducted to demonstrate that contact heating causes a drop in contact resistance. However, existing theory is shown to over-predict heating for MEMS switch contacts because it does not consider ballistic transport of electrons in the contact. Therefore, we extend the theory and develop a predictive model that shows excellent agreement with the experimental results. It is also observed that mechanical cycling causes an increase in contact resistance. We identify this effect as related to the build-up of an insulating film and demonstrate operational conditions to prevent an increase in contact resistance. The improved understanding of contact behavior gained through our modeling and experiments allows switch performance to be improved.[1424]

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Section: B Experimental Setupmentioning

confidence: 99%

Effect of nanoscale heating on electrical transport in RF MEMS switch contacts

Jensen

Chow

Huang

et al. 2005

J. Microelectromech. Syst.

122

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“…The behavior of contacts can be approximated by Rcont, Ccont representing the contact resistance, contact capacitance parameters respectively [19].…”

Section: Circuit Model For Micro-scale Contactsmentioning

confidence: 99%

High speed test interface module using MEMS technology

Kandalaft

Attaran

Rashizadeh

2015

Microelectronics Reliability

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a b s t r a c t At frequencies above a few gigahertz, testing integrated circuits becomes a challenging task. Test signal integrity degradation due to parasitic effects of interconnects and electromagnetic coupling undermine the test results and increase the yield loss of integrated circuits at high speeds. A new test interface module based on MEMS technology is proposed in this paper. High-speed micro test-channels are designed to establish connectivity between the device under test and the tester at the die level. Experimental results indicate that the proposed architecture can be used to test integrated circuits up to 50 GHz without much loss or distortion.

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“…The test apparatus is a circuit with two external ports, the input port (port 1) and the output port (port 2) for the S parameters measurement. Using the vector network analyser we measure the parameters of the scattering matrix [S] [6]: ) dB were made in the frequency range from 0.1GHz to 18GHz and in the compression force range from 2g to 60g. The force results from MPI compression by a motor displacement in the vertical direction (z) with a low increment (10nm).…”

Section: Experimental Apparatusmentioning

confidence: 99%

“…In the same way, the authors [5] have investigated on a microwave model of an anisotropic conductive film Flip-Chip interconnection for high frequency applications. Kwiatkowski et al [6] have presented an improved model of the microwave contact to analyse the behaviour of an RF electromechanical coaxial switch and a metal contact RF MEMS switch. An experimental method was presented to determine the mapping between the DC contact resistance and RF characteristics in terms of a scattering parameters matrix.…”

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confidence: 99%

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Contact impedance characterization of metallized particle column to copper strip in high frequency domains

Jemaa¹,

Himdi²,

Senouci³

et al.

Proceedings of the 50th IEEE Holm Conference on Electrical Contacts and the 22nd International Conference on Electrical Contact

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The number of applications using high frequency bands up 10 GHz is in constant progression in various domains (highspeed communication, portable phone, radar…). This demand has been widely extended to connectors in automotive applications. In fact various connectors have been designed and developped in order to be used over a wide range of frequencies from a few MHz to several GHz. Among these connectors, Metallized Particle Interconnects (MPI) used widely in interconnections (ASICs, PCs, workstations …), constitute an interesting candidate to be developped for high frequency connectors, for frequencies up to 18GHz. In order to simulate the connector, an MPI column was used as a terminal and compressed between two microstrip lines of copper (PCB). Signal losses measurements in the frequency band 100MHz to 18GHz are evaluated as a function of compression force. It was found that the impedance of the system is equivalent to an RCL circuit. By fitting experimental loss data we have analyzed each component and have established the impedance laws. I. INTROCUCTIONMetallized Particle Interconnects (MPI) have been introduced by several manufacturers and been used worldwide in a variety of applications. MPI is a material system designed to address high density socket and connector requirements. Today's microprocessors and ASICs continue to increase in both pin count and density. The MPI product line produces sizes from 24 to 5000+ I/O on 0.5mm and 2.54mm grid spacing. The patented MPI technology provides a highly conductive interconnect. The proprietary material consists of a high temperature polymer compound that has been embedded with metallized particles. The MPI, in general was designed to provide an electrically and mechanically reliable, low cost interconnection method without the use of metal pin or solder techniques [1]. Some investigations have been made on an MPI using a coplanar technique in the range from 0.05GHz to 2.05GHz [2]. The results reveal the existence of a low mutual inductance and capacitance (0.3nH/0.065pF).A lot of work has been done in this area. Ahn et al [3] have introduced an electrical model and determined the high frequency characteristics of a multiple line grid array (MLGA) interposer. Their model was derived on the basis of S parameter measurements and a subsequent microwave network analysis. They have measured different types of MLG interposers with different dielectric insulators and dimensions and they have shown that by reducing the height of the MLGA, the effect of parasitic inductance and capacitance decreases.W. Ryu et al [4] have developed a high frequency SPICE model of anisotropic conductive film Flip chip (ACF) interconnections based on S parameter measurements and a genetic algorithm which is known as a robust optimisation tool. Two different ACF interconnections were studied using an Au-coated polymer ball and a Ni-filled ball. The extracted model of the two ACFs was found to be strongly dependent on not only the size and the rigidity of the conducting balls but also on their...

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Scattering parameter model of low level electrical contacts in electro-mechanical microwave switches-a switch manufacturer approach

Cited by 10 publications

References 8 publications

Effect of nanoscale heating on electrical transport in RF MEMS switch contacts

Effect of nanoscale heating on electrical transport in RF MEMS switch contacts

High speed test interface module using MEMS technology

Contact impedance characterization of metallized particle column to copper strip in high frequency domains

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