Scatterometer Sensitivity for Statistical Process Control: Importance of Modeling for In-direct Measurements

Smith, Brian R.; Bushman, Scott; Baum, C.

doi:10.1063/1.2063000

Cited by 1 publication

(2 citation statements)

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“…However, the accuracy of the scatterometry measurement is highly dependent on the optical model of the film stack [10]. For this work, the construction of the scatterometer model required multiple iterations of the structure parameters (CD, sidewall angle, film thicknesses, film optical constants) to determine the library ranges for the final model.…”

Section: Procedures and Apperatusmentioning

confidence: 99%

“…The fast MAM times are a natural advantage for inline measurements, especially relative to the profilometer method. However, complex film stacks can be challenging for the scatterometer because of the required film information necessary for model development [10]. The goal of the current study is to assess whether a scatterometer model can be developed with sufficient fidelity to replace the profilometer for height measurements of FRAM test structures and capacitors.…”

Section: Introductionmentioning

confidence: 99%

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Characterization and Control of Etch Processes Using Multiple Metrologies

Bushman¹,

Celii²,

Martin³

et al. 2005

AIP Conference Proceedings

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Engineering coercivities by dual ion beam sputtering for synthesizing soft permalloy-based spin-valve multilayers (abstract) Journal of Applied Physics 79, 5826 (1996) Scatterometry is a non-destructive optical metrology based on the analysis of light scattered from a periodic sample. It is a faster technique than either profilometry or AFM because of the optical nature of the measurement, and provides measurements of patterned grating structures. However, a detailed film model is required to estimate parameters of interest. The scatterometry model for this investigation includes four adjustable parameters: TiAlN material index of refraction, thickness, linewidth and sidewall angle. The results show good agreement between the scatterometry measurements and the AFM across the range of step-heights available on the wafers. In addition, the practical aspects of the method, such as the modeling time and estimation of material parameters required to generate the signature library as well as measurement speed are presented.

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Section: Procedures and Apperatusmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%