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Infrared diode laser absorption spectroscopy is employed as an in situ method to examine gas phase species present during filament-assisted deposition of diamond films. From a reactant mixture of 0.5% methane in hydrogen, methyl radical (CH3 ), acetylene (C2H2), and ethylene (C2H4 ) are detected above the growing surface, while ethane (C2H6 ), various C3 hydrocarbons, and methylene (CH2) radicals are below our sensitivity levels. The growth of polycrystalline diamond films on Si wafers and polycrystalline Ni is confirmed with x-ray and Raman scattering, scanning electron microscopy, and Auger electron spectroscopy.

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TP53 mutations are the most frequent genetic alterations in breast cancer and are associated with more aggressive disease and worse overall survival. We have created two conditional mutant Trp53 alleles in the mouse that allow expression of Trp53R172H or Trp53R245W missense mutations in single cells surrounded by a normal stroma and immune system. Mice with Trp53 mutations in a few breast epithelial cells develop breast cancers with high similarity to human breast cancer including triple negative. p53R245W tumors are the most aggressive and exhibit metastases to lung and liver. Development of p53R172H breast tumors with some metastases requires additional hits. Sequencing of primary tumors and metastases shows p53R245W drives a parallel evolutionary pattern of metastases. These in vivo models most closely simulate the genesis of human breast cancer and will thus be invaluable in testing novel therapeutic options.

Using variable angle spectroscopic ellipsometry, optical constants for AlAs (1.4-5.0 eV) are presented which are simultaneously compatible with measured data from four different samples. The below-gap index values are compatible with published prism measured values. The second derivative spectrum are compatible with published values above the direct band gap. The AlAs spectra is Kramers-Kromg self-consistent over the measured range and is compatible with published values from 0.6 to 1.4 eV. The optical constants for thin ((50 A) GaAs caps on AlAs are shown to be different from bulk GaAs values and require special consideration when fitting ellipsometric data. For the thin GaAs caps, the Et and E,+A, critical-point structure is shifted to higher energies as previously observed for GaAs quantum wells. Bulk AlAs optical constants are shown to be different from those of a thin (-20 A) AlAs barrier layer embedded in GaAs. The thin barrier layer exhibits a highly broadened critical-point structure. This barrier broadening effect (AlAs) and the thin cap shifting effects (GaAs) have implications for in situ growth control schemes which make use of the E, and E, +A, critical-point region. 0 1995 American Institute of Physics.