Schottky-barrier and conductivity gas sensors based upon Pd/SnO2 and Pt/TiO2

Schierbaum, K.D.; Kirner, U.; Geiger, J.; Göpel, Wolfgang

doi:10.1016/0925-4005(91)80181-i

Cited by 196 publications

(82 citation statements)

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“…28 More generally, the results are relevant to a far wider range of TiO 2 applications where non-equilibrium electric field driven defect generation may contribute to material degradation, for example, in photocatalysts, dye-sensitized solar cells and electrodes in rechargeable batteries. [30][31][32] ACKNOWLEDGMENTS K.P.M. acknowledges support from EPSRC (EP/ K003151) and COST Action CM1104.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, we consider TiO 2 , which is a useful model system as it is both a candidate material for ReRAM and finds many other applications where non-equilibrium defect generation under electrical bias may be relevant (e.g., electrodes in rechargeable batteries, gas sensors, photocatalysts, and solar-cells [30][31][32] ). The equilibrium properties of a wide range of defects in TiO 2 have been addressed theoretically using both semi-empirical and density functional theory based approaches.…”

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Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Abdelouahed

McKenna

2015

Journal of Applied Physics

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First principles calculations are employed to identify atomistic pathways for the generation of vacancy-interstitial pair defects in TiO2. We find that the formation of both oxygen and titanium defects induces a net dipole moment indicating that their formation can be assisted by an electric field. We also show that the activation barrier to formation of an oxygen vacancy defect can be reduced by trapping of holes which may be injected by the electrode. The calculated activation energies suggest that generation of titanium defects is more favorable than generation oxygen defects although activation energies in both cases are relatively high (>3.3 eV). These results provide much needed insight into an issue that has been widely debated but for which little definitive experimental information is available.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Abdelouahed

McKenna

2015

Journal of Applied Physics

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“…3.6). 184,191 The amount of band bending and its spatial extension away from the interface depend on the ionization potential of the free oxide compared to the metal Fermi level and on the available charge density in the oxide to screen the band perturbation. 85 For thin oxide films, the decay length of the band bending often exceeds the layer thickness, and valence and conduction bands are simply offset in energy.…”

Section: Fig 36mentioning

confidence: 99%

Properties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopy

Nilius

2009

Surface Science Reports

221

233

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The preparation of thin oxide films on metal supports is a versatile approach to explore the properties of oxide materials that are otherwise inaccessible to most surface science techniques due to their insulating nature. Although substantial progress has been made in the characterization of oxide surfaces with spatially averaging techniques, a local view is often essential to provide comprehensive understanding of such systems. The scanning tunneling microscope (STM) is a powerful tool to obtain atomic-scale information on the growth behavior of oxide films, the resulting surface morphology and defect structure.

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“…The effects of chemisorbed water and oxygen species on the electrical characteristics of metal oxide semiconductors have been used for the design of gas sensors. 11 To gain more detailed information about these effects in the present case, the photovoltage of a Ti/TiO 2 /Au (30 nm) device exposed to a variety of gas mixtures was measured over time ( Figure 3). A photovoltage of 210 mV is measured immediately after the start of illumination in an inert argon atmosphere; however, the photovoltage vanishes within 20 min.…”

Section: Resultsmentioning

confidence: 99%

Chemisorption Determines the Photovoltage of a Ti/TiO₂/Au/Dye Internal Electron Emission Photovoltaic Cell

et al. 2005

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The Ti/TiO 2 /Au junction forms the basis of a promising new type of photovoltaic cell, provided that a lightharvesting antenna layer can be deposited on the thin gold film. We report that the electrical diode characteristics of the TiO 2 /Au Schottky barrier deteriorate by deposition of a hydrophobic quantum dot film, Merbromin dye adsorption, or electron-hole photogeneration in TiO 2 under inert conditions. In the presence of oxygen and water vapor, the Schottky barrier characteristics and high photovoltage are recovered. The strong influence of the TiO 2 surface chemistry on the (photo)electrical characteristics of the solar cell is discussed on the basis of an existing microscopic model.

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Schottky-barrier and conductivity gas sensors based upon Pd/SnO2 and Pt/TiO2

Cited by 196 publications

References 20 publications

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Properties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopy

Chemisorption Determines the Photovoltage of a Ti/TiO₂/Au/Dye Internal Electron Emission Photovoltaic Cell

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Schottky-barrier and conductivity gas sensors based upon Pd/SnO2 and Pt/TiO2

Cited by 196 publications

References 20 publications

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Relevance of non-equilibrium defect generation processes to resistive switching in TiO2

Properties of oxide thin films and their adsorption behavior studied by scanning tunneling microscopy and conductance spectroscopy

Chemisorption Determines the Photovoltage of a Ti/TiO2/Au/Dye Internal Electron Emission Photovoltaic Cell

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Chemisorption Determines the Photovoltage of a Ti/TiO₂/Au/Dye Internal Electron Emission Photovoltaic Cell