Schottky barrier formation at amorphous-crystalline interfaces of GeSb phase change materials

Abstract

The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface potential of the crystalline phase is ∼30–60 mV higher than that of the amorphous phase. This potential asymmetry is explained qualitatively by the presence of a Schottky barrier at the amorphous-crystalline interface and supported also by quantitative Schottky model calculations.

Energy filtering enhancement of thermoelectric performance of nanocrystalline Cr1− Si composites

“…Due to the band bending at the interface there is a depletion region located mainly in the NC grains (due to a lower carrier concentration). The depth of the depletion layer (Z d ) can be estimated with expression [23]:…”

Experimental validation of state equations and dynamic route maps for phase change memristive devices

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