The higher dielectric constant and electron donating properties of PTEG-1 electron extraction layer synergistically helps to eliminate the light soaking effect and enhance device performance.

Mg 2 NiH 4 thin films have been prepared by activated reactive evaporation in a molecular beam epitaxy system equipped with an atomic hydrogen source. The optical reflection spectra and the resistivity of the films are measured in situ during deposition. In situ grown Mg 2 NiH 4 appears to be stable in vacuum due to the fact that the dehydrogenation of the Mg 2 NiH 4 phase is kinetically blocked. Hydrogen desorption only takes place when a Pd cap layer is added. The optical band gap of the in situ deposited Mg 2 NiH 4 hydride, 1.75 eV, is in good agreement with that of Mg 2 NiH 4 which has been formed ex situ by hydrogenation of metallic Pd capped Mg 2 Ni films. The microstructure of these in situ grown films is characterized by a homogeneous layer with very small grain sizes. This microstructure suppresses the preferred hydride nucleation at the film/substrate interface which was found in as-grown Mg 2 Ni thin films that are hydrogenated after deposition.

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The electrical properties of amorphous-crystalline interfaces in phase change materials, which are important for rewritable optical data storage and for random access memory devices, have been investigated by surface scanning potential microscopy. Analysis of GeSb systems indicates that the surface potential of the crystalline phase is ∼30–60 mV higher than that of the amorphous phase. This potential asymmetry is explained qualitatively by the presence of a Schottky barrier at the amorphous-crystalline interface and supported also by quantitative Schottky model calculations.