Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

Malakoutian, Mohamadali; Benipal, Manpuneet; Koeck, Franz A.; Nemanich, R. J.; Chowdhury, Srabanti

doi:10.1109/jeds.2020.2999269

Cited by 21 publications

(9 citation statements)

References 22 publications

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“…Two different values of the Richardson constants result from the fact that, depending on the temperature range, we have two different Gaussian barrier potential distributions. The obtained values of Richardson’s constants are much smaller than the theoretical one of 90 A cm −2 K −2 [ 34 ]. The values of the Richardson’s constants reported in the literature [ 4 , 35 , 36 , 37 ] are in the wide range of 1.0995–1.9 × 10 −9 A cm −2 K −2 .…”

Section: Resultsmentioning

confidence: 91%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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In this work, the electrical parameters of the polycrystalline diamonds’ p-PCD/n-Si heterojunction were investigated using temperature-dependent current–voltage (I-V) characteristics. In the temperature range of 80–280 K, the ideality factor (n) and energy barrier height (φb) were found to be strongly temperature dependent. The φb increases with temperature rise, while the n value decreases. The observed dependencies are due to imperfections at the interface region of a heterojunction and the non-homogeneous distribution of the potential barrier heights. Values of the φb were calculated from I-V characteristics using the thermionic emission theory (TE). The plot of φb versus 1/2 kT revealed two distinct linear regions with different slopes in temperature regions of 80–170 K and 170–280 K. This indicates the existence of a double Gaussian distribution (DGD) in heterojunctions. Parameters such as mean barrier heights φ¯b and standard deviations σ were obtained from the plots linearization and read out from intercepts and slopes. They take values φ¯b = 1.06 eV, σ = 0.43 eV, respectively. The modified Richardson plot is drawn to show the linear behavior in these two temperature ranges, disclosing different values of the effective Richardson constants (A*).

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Section: Resultsmentioning

confidence: 91%

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

et al. 2022

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“…In Table 2, we can see the ideality factor n decreases with temperature (the exception is the value for 453 °C, where the reading of the value is hampered by the change in the shape of the characteristic) while the Schottky barrier height Φ B0 slightly increases from 1.31 to 1.33 eV. This behavior is characteristic of SBDs realized on wide‐bandgap semiconductors (SiC, [ 30 ] GaN, [ 31 ] and diamond [ 32 ] ) and is due to inhomogeneity of the barrier height. At low temperature, charge carriers can only pass through the part of the contact where the barrier is low.…”

Section: Resultsmentioning

confidence: 99%

“…An increase in temperature will then allow carriers to overcome regions with a higher barrier. [ 32 ]…”

Section: Resultsmentioning

confidence: 99%

“…An increase in temperature will then allow carriers to overcome regions with a higher barrier. [32] A widely used Schottky contact model considering inhomogeneities in the barrier is the model presented by Tung. [27] This model assumes the presence of locally nonuniform regions having lower or higher barriers with respect to an average barrier height.…”

Section: Schottky Contactmentioning

confidence: 99%

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Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Hazdra,

Laposa,

Šobáň

et al. 2023

Physica Status Solidi (a)

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Electrical properties of pseudo‐vertical Schottky barrier diodes (pVSBDs) prepared on (113)–oriented boron doped diamond layers using ruthenium for both the ohmic and Schottky contacts were investigated. First, Ru/Au ohmic contacts were evaporated on homoepitaxial boron doped diamond layers with different resistivity and their specific contact resistance was measured using circular transfer length method structures after annealing at various temperatures up to 750 ˚C. Then, pseudo‐vertical Schottky barrier diode structures were fabricated on the boron doped bi‐layer consisting of a lower, heavily boron‐doped layer ensuring an ohmic contact and an upper, lightly doped layer providing a rectifying Schottky contact. After necessary mesa etching, both contacts were formed by the evaporation Ru/Au bi‐layer. Results show that Ru forms a stable ohmic contact with very low contact resistance (10‐5‐10‐6 Ω.cm2) when deposited on boron doped diamond layers with metallic conductivity. It also provides an acceptable Schottky contact on low‐doped (113) homoepitaxial BDD. Both contacts, which are made simultaneously, realize pVSBDs with low on‐state resistance and low forward voltage drop. However, the lower barrier of the ruthenium contacts results in higher leakage. Ru pVSBDs thus show lower rectification ratio, higher leakage and a worse ideality factor compared to analogical pVSBDs using molybdenum contacts.This article is protected by copyright. All rights reserved.

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“…[9] However, several issues induce inhomogeneous SBHs. [10][11][12] SBH lowering patches that occur in the Schottky region owing to the nonuniform MS contact and defective area in the Schottky pad cause inhomogeneous SBH at reverse voltage under 40 V. [13] This inhomogeneous SBH occurrence makes the SBD incapable of excellent performance. Various methods have been investigated to address these issues.…”

Section: Introductionmentioning

confidence: 99%

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

Han¹,

Kwak²,

Choi³

et al. 2023

Physica Status Solidi (a)

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Herein, the growth of lateral‐structure p‐type diamond Schottky barrier diodes (SBDs) on a heteroepitaxial diamond substrate using a thin atomic‐layer‐deposited hafnium oxide () interfacial layer is demonstrated. The diamond SBD is grown using the microwave plasma chemical vapor deposition (MPCVD) with 1 kW microwave power at 2.45 GHz. Two kinds of samples are grown on heteroepitaxial diamond substrates under the same growth conditions for identical epi structures. And the 10 nm thickness of is used as an insulator for MIS SBD. The effects of the interlayer on the electrical properties of the SBDs are investigated using current–voltage (I–V curve) and capacitance–voltage (C–V curve) characteristics at room temperature. Compared with the metal–semiconductor (MS) SBD, the metal–insulator–semiconductor (MIS) SBD exhibited a lower reverse leakage current. The Schottky barrier height in the MIS SBD is almost 0.2 eV higher than in the MS SBD. The insertion of the interlayer reduces the inhomogeneous Schottky barrier height and enhances the barrier height because of the reduction in the interface state density.

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Schottky Barrier Height Analysis of Diamond SPIND Using High Temperature Operation up to 873 K

Cited by 21 publications

References 22 publications

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

The Barrier’s Heights and Its Inhomogeneities on Diamond Silicon Interfaces

Pseudo‐Vertical Schottky Diode with Ruthenium Contacts on (113) Boron‐Doped Homoepitaxial Diamond Layers

Electrical Characteristics of Metal–Insulator Diamond Semiconductor Schottky Barrier Diode Grown on Heteroepitaxial Diamond Substrate

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