Schottky barrier height model as a function controlled composition x for SiC solid solutions

Abstract

The paper considers the characteristics of single crystals SiC and power semiconductor devices with a Schottky barrier based on it. Such devices are designed to work in extreme operating conditions: high temperatures, pressures, radiation and chemical resistance. At the same time, power electronic keys should not lose their declared properties up to 400-500 C°. The forward and inverse Volt-ampere characteristics diodes with the Schottky barrier based on SiC are given. Ключевые слова: монокристаллы SiC, твердые растворы, барьер Шоттки, вольт-амперная характеристика.